Back-action-induced excitation of electrons in a silicon quantum dot with a single-electron transistor charge sensor

Journal Article · Mon Feb 02 04:00:00 EST 2015 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.4907894· OSTI ID:22420274

Horibe, Kosuke; Oda, Shunri ^[1]; Kodera, Tetsuo ^[1]

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1. Quantum Nanoelectronics Research Center, Tokyo Institute of Technology, 2-12-1 Ookayama, Meguro, Tokyo 152-8552 (Japan)

Back-action in the readout of quantum bits is an area that requires a great deal of attention in electron spin based-quantum bit architecture. We report here back-action measurements in a silicon device with quantum dots and a single-electron transistor (SET) charge sensor. We observe the back-action-induced excitation of electrons from the ground state to an excited state in a quantum dot. Our measurements and theoretical fitting to the data reveal conditions under which both suitable SET charge sensor sensitivity for qubit readout and low back-action-induced transition rates (less than 1 kHz) can be achieved.

• OSTI ID: 22420274
• Journal Information: Applied Physics Letters, Journal Name: Applied Physics Letters Journal Issue: 5 Vol. 106; ISSN APPLAB; ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

71 CLASSICAL AND QUANTUM MECHANICS
GENERAL PHYSICS
ELECTRONS
EXCITATION
EXCITED STATES
QUANTUM DOTS
QUBITS
READOUT SYSTEMS
SENSORS
SILICON
TRANSISTORS