skip to main content
OSTI.GOV title logo U.S. Department of Energy
Office of Scientific and Technical Information

Title: Growth-induced electron mobility enhancement at the LaAlO{sub 3}/SrTiO{sub 3} interface

Abstract

We have studied the electronic properties of the 2D electron liquid present at the LaAlO{sub 3}/SrTiO{sub 3} interface in series of samples prepared at different growth temperatures. We observe that interfaces fabricated at 650 °C exhibit the highest low temperature mobility (≈10 000 cm{sup 2} V{sup −1} s{sup −1}) and the lowest sheet carrier density (≈5×10{sup 12} cm{sup −2}). These samples show metallic behavior and Shubnikov-de Haas oscillations in their magnetoresistance. Samples grown at higher temperatures (800–900 °C) display carrier densities in the range of ≈2−5×10{sup 13} cm{sup −2} and mobilities of ≈1000 cm{sup 2} V{sup −1} s{sup −1} at 4 K. Reducing their carrier density by field effect to 8×10{sup 12} cm{sup −2} lowers their mobilities to ≈50 cm{sup 2} V{sup −1} s{sup −1} bringing the conductance to the weak-localization regime.

Authors:
; ; ; ; ; ;  [1]
  1. Department of Quantum Matter Physics, Université de Genève, 24 Quai Ernest-Ansermet, 1211 Genève 4 (Switzerland)
Publication Date:
OSTI Identifier:
22420240
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 106; Journal Issue: 5; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; ALUMINATES; CARRIER DENSITY; ELECTRON MOBILITY; INTERFACES; LANTHANUM COMPOUNDS; MAGNETORESISTANCE; STRONTIUM TITANATES; TEMPERATURE RANGE 0400-1000 K; TEMPERATURE RANGE 1000-4000 K

Citation Formats

Fête, A., Cancellieri, C., Li, D., Stornaiuolo, D., Caviglia, A. D., Gariglio, S., and Triscone, J.-M. Growth-induced electron mobility enhancement at the LaAlO{sub 3}/SrTiO{sub 3} interface. United States: N. p., 2015. Web. doi:10.1063/1.4907676.
Fête, A., Cancellieri, C., Li, D., Stornaiuolo, D., Caviglia, A. D., Gariglio, S., & Triscone, J.-M. Growth-induced electron mobility enhancement at the LaAlO{sub 3}/SrTiO{sub 3} interface. United States. doi:10.1063/1.4907676.
Fête, A., Cancellieri, C., Li, D., Stornaiuolo, D., Caviglia, A. D., Gariglio, S., and Triscone, J.-M. Mon . "Growth-induced electron mobility enhancement at the LaAlO{sub 3}/SrTiO{sub 3} interface". United States. doi:10.1063/1.4907676.
@article{osti_22420240,
title = {Growth-induced electron mobility enhancement at the LaAlO{sub 3}/SrTiO{sub 3} interface},
author = {Fête, A. and Cancellieri, C. and Li, D. and Stornaiuolo, D. and Caviglia, A. D. and Gariglio, S. and Triscone, J.-M.},
abstractNote = {We have studied the electronic properties of the 2D electron liquid present at the LaAlO{sub 3}/SrTiO{sub 3} interface in series of samples prepared at different growth temperatures. We observe that interfaces fabricated at 650 °C exhibit the highest low temperature mobility (≈10 000 cm{sup 2} V{sup −1} s{sup −1}) and the lowest sheet carrier density (≈5×10{sup 12} cm{sup −2}). These samples show metallic behavior and Shubnikov-de Haas oscillations in their magnetoresistance. Samples grown at higher temperatures (800–900 °C) display carrier densities in the range of ≈2−5×10{sup 13} cm{sup −2} and mobilities of ≈1000 cm{sup 2} V{sup −1} s{sup −1} at 4 K. Reducing their carrier density by field effect to 8×10{sup 12} cm{sup −2} lowers their mobilities to ≈50 cm{sup 2} V{sup −1} s{sup −1} bringing the conductance to the weak-localization regime.},
doi = {10.1063/1.4907676},
journal = {Applied Physics Letters},
number = 5,
volume = 106,
place = {United States},
year = {Mon Feb 02 00:00:00 EST 2015},
month = {Mon Feb 02 00:00:00 EST 2015}
}