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Theoretical study of a screened Hartree–Fock exchange potential using position-dependent atomic dielectric constants

Journal Article · · Journal of Chemical Physics
DOI:https://doi.org/10.1063/1.4908061· OSTI ID:22416140
;  [1]
  1. RIKEN, Advanced Institute for Computational Science, 7-1-26 Minatojima-minami-machi, Chuo-ku, Kobe, Hyogo 650-0047 (Japan)
Dielectric-dependent screened Hartree–Fock (HF) exchange potential and Slater-formula have been reported, where the ratio of the HF exchange term mixed into potentials is inversely proportional to the dielectric constant of the target semiconductor. This study introduces a position-dependent dielectric constant method in which the dielectric constant is partitioned between the atoms in a semiconductor. These partitioned values differ depending on the electrostatic environment surrounding the atoms and lead to position-dependent atomic dielectric constants. These atomic dielectric constants provide atomic orbital-based matrix elements for the screened exchange potentials. Energy band structures of several semiconductors and insulators are also presented to validate this approach.
OSTI ID:
22416140
Journal Information:
Journal of Chemical Physics, Journal Name: Journal of Chemical Physics Journal Issue: 7 Vol. 142; ISSN JCPSA6; ISSN 0021-9606
Country of Publication:
United States
Language:
English

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