LaTiO{sub 3}/KTaO{sub 3} interfaces: A new two-dimensional electron gas system

Zou, K.; Ismail-Beigi, Sohrab; Walker, F. J.; Ahn, C. H.; Kisslinger, Kim; Su, Dong; Shen, Xuan

doi:10.1063/1.4914310

Title: LaTiO{sub 3}/KTaO{sub 3} interfaces: A new two-dimensional electron gas system

Journal Article · Sun Mar 01 00:00:00 EST 2015 · APL materials

DOI:https://doi.org/10.1063/1.4914310· OSTI ID:22415259

Zou, K.; Ismail-Beigi, Sohrab; Walker, F. J.; Ahn, C. H. ^[1]; Kisslinger, Kim; Su, Dong ^[2]; Shen, Xuan ^[2]

Department of Applied Physics and Center for Research on Interface Structures and Phenomena (CRISP), Yale University, New Haven, Connecticut 06520 (United States)
Brookhaven National Laboratory, Center for Functional Nanomaterials, Upton, New York 11973 (United States)

We report a new 2D electron gas (2DEG) system at the interface between a Mott insulator, LaTiO{sub 3}, and a band insulator, KTaO{sub 3}. For LaTiO{sub 3}/KTaO{sub 3} interfaces, we observe metallic conduction from 2 K to 300 K. One serious technological limitation of SrTiO{sub 3}-based conducting oxide interfaces for electronics applications is the relatively low carrier mobility (0.5-10 cm{sup 2}/V s) of SrTiO{sub 3} at room temperature. By using KTaO{sub 3}, we achieve mobilities in LaTiO{sub 3}/KTaO{sub 3} interfaces as high as 21 cm{sup 2}/V s at room temperature, over a factor of 3 higher than observed in doped bulk SrTiO{sub 3}. By density functional theory, we attribute the higher mobility in KTaO{sub 3} 2DEGs to the smaller effective mass for electrons in KTaO{sub 3}.

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OSTI ID:: 22415259

Journal Information:: APL materials, Vol. 3, Issue 3; Other Information: (c) 2015 Author(s); Country of input: International Atomic Energy Agency (IAEA); ISSN 2166-532X

Country of Publication:: United States

Language:: English

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