Type-I interband cascade lasers near 3.2 μm

Journal Article · Mon Jan 26 00:00:00 EST 2015 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.4907326· OSTI ID:22415177

Jiang, Yuchao; Li, Lu; Gupta, James A.; Aers, Geof C.; Dupont, Emmanuel; Baribeau, Jean-Marc; Wu, Xiaohua ^[1]; Johnson, Matthew B. ^[2]

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1. National Research Council of Canada, Ottawa K1A 0R6 (Canada)
2. Homer L. Dodge Department of Physics and Astronomy, University of Oklahoma, Norman, Oklahoma 73019 (United States)

Interband cascade (IC) lasers have been demonstrated based on type-I InGaAsSb/AlAsSb quantum well (QW) active regions. These type-I IC lasers are composed of 6-cascade stages and InAs/AlSb superlattice cladding layers. In contrast to the use of quinary AlGaInAsSb barriers for active region in previous type-I QW lasers, the type-I QW active region in each stage is sandwiched by digitally graded multiple InAs/AlSb QW electron injector and GaSb/AlSb QW hole injector. The fabricated type-I IC lasers were able to operate in continuous wave and pulsed modes at temperatures up to 306 and 365 K, respectively. The threshold current densities of broad-area lasers were around 300 A/cm{sup 2} at 300 K with a lasing wavelength near 3.2 μm. The implications and prospects of these initial results are discussed.

• OSTI ID: 22415177
• Journal Information: Applied Physics Letters, Vol. 106, Issue 4; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

77 NANOSCIENCE AND NANOTECHNOLOGY
CLADDING
GALLIUM ANTIMONIDES
INDIUM ARSENIDES
INTERMEDIATE INFRARED RADIATION
QUANTUM WELLS
SEMICONDUCTOR LASERS
TEMPERATURE RANGE 0273-0400 K
THRESHOLD CURRENT