Deep ultraviolet distributed Bragg reflectors based on graded composition AlGaN alloys
- Department of Electrical and Computer Engineering, Boston University, Boston, Massachusetts 02215 (United States)
- Photonics Center, Boston University, Boston, Massachusetts 02215 (United States)
Distributed Bragg reflectors (DBRs) with peak reflectivity at approximately 280 nm, based on compositionally graded Al{sub x}Ga{sub 1−x}N alloys, were grown on 6H-SiC substrates by plasma-assisted molecular beam epitaxy. DBRs with square, sinusoidal, triangular, and sawtooth composition profiles were designed with the transfer matrix method. The crystal structure of these DBRs was studied with high-resolution x-ray diffraction of the (1{sup ¯}015) reciprocal lattice point. The periodicity of the DBR profiles was confirmed with cross-sectional Z-contrast scanning transmission electron microscopy. The peak reflectance of these DBRs with 15.5 periods varies from 77% to 56% with corresponding full width at half maximum of 17–14 nm. Coupled mode analysis was used to explain the dependence of the reflectivity characteristics on the profile of the graded composition.
- OSTI ID:
- 22415096
- Journal Information:
- Applied Physics Letters, Journal Name: Applied Physics Letters Journal Issue: 22 Vol. 106; ISSN APPLAB; ISSN 0003-6951
- Country of Publication:
- United States
- Language:
- English
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