Frequency-dependent polarization-angle-phase-shift in the microwave-induced magnetoresistance oscillations

Journal Article · Sat Feb 14 00:00:00 EST 2015 · Journal of Applied Physics

DOI:https://doi.org/10.1063/1.4907564· OSTI ID:22413098

Liu, Han-Chun; Ye, Tianyu; Mani, R. G. ^[1]; Wegscheider, W. ^[2]

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1. Department of Physics and Astronomy, Georgia State University, Atlanta, Georgia 30303 (United States)
2. Laboratorium für Festkörperphysik, ETH Zürich, CH-8093 Zürich (Switzerland)

Linear polarization angle, θ, dependent measurements of the microwave radiation-induced oscillatory magnetoresistance, R{sub xx}, in high mobility GaAs/AlGaAs 2D electron devices have shown a θ dependence in the oscillatory amplitude along with magnetic field, frequency, and extrema-dependent phase shifts, θ{sub 0}. Here, we suggest a microwave frequency dependence of θ{sub 0}(f) using an analysis that averages over other smaller contributions, when those contributions are smaller than estimates of the experimental uncertainty.

• OSTI ID: 22413098
• Journal Information: Journal of Applied Physics, Vol. 117, Issue 6; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0021-8979
• Country of Publication: United States
• Language: English

Related Subjects

71 CLASSICAL AND QUANTUM MECHANICS
GENERAL PHYSICS
ALUMINIUM ARSENIDES
CARRIER MOBILITY
ELECTRONS
FREQUENCY DEPENDENCE
GALLIUM ARSENIDES
INTERFACES
MAGNETIC FIELDS
MAGNETORESISTANCE
MICROWAVE RADIATION
OSCILLATIONS
PHASE SHIFT
POLARIZATION