Fabrication and orientation control of highly cation-ordered epitaxial PbSc{sub 0.5}Ta{sub 0.5}O{sub 3} thin films on Si (100)

Journal Article · Wed Jan 28 04:00:00 EST 2015 · Journal of Applied Physics

DOI:https://doi.org/10.1063/1.4906845· OSTI ID:22412997

Chopra, Anuj ^[1]; Alexe, Marin ^[1]; Hesse, Dietrich ^[1]

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1. Max Planck Institute of Microstructure Physics, Weinberg 2, D-06120 Halle (Saale) (Germany)

Highly cation-ordered (100) and (110)-oriented PbSc{sub 0.5}Ta{sub 0.5}O{sub 3} (PST) films were deposited on buffered Si (100) substrates using pulsed laser deposition. Switching of crystal orientation from (100) to (110) was achieved by replacing the Si (100)/ZrO2:Y2O3 (100)/CeO2 (100)/LaNiO3 (100)/PST (100) heterostructure with Si (100)/ZrO2:Y2O3 (YSZ) (100)/SrRuO3 (110)/PST (110). The out-of-plane and in-plane crystal orientation and internal microstructure of (001) and (110) PST films were analyzed in detail by X-ray diffraction, pole figure measurements, and transmission electron microscopy. XRD superstructure reflections indicate that both (100) and (110) PST films are highly cation-ordered and transmission electron microscopy measurements show nano-domains of 15 nm size. The electrical measurements show that the PST films are ferroelectric and that the ferroelectric properties are linked to the microstructure. We have demonstrated the successful integration of PST films on Si substrates with control on growth orientation; this approach can be extended to other oxides to be integrated on silicon substrates for future device applications.

• OSTI ID: 22412997
• Journal Information: Journal of Applied Physics, Journal Name: Journal of Applied Physics Journal Issue: 4 Vol. 117; ISSN JAPIAU; ISSN 0021-8979
• Country of Publication: United States
• Language: English

Related Subjects

75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
CERIUM OXIDES
CRYSTAL STRUCTURE
CRYSTALS
ENERGY BEAM DEPOSITION
EPITAXY
FERROELECTRIC MATERIALS
LASER RADIATION
LEAD COMPOUNDS
MICROSTRUCTURE
PULSED IRRADIATION
SCANDIUM COMPOUNDS
SILICON
SUBSTRATES
TANTALATES
THIN FILMS
TRANSMISSION ELECTRON MICROSCOPY
X-RAY DIFFRACTION
YTTRIUM OXIDES
ZIRCONIUM OXIDES