Optical probing of MgZnO/ZnO heterointerface confinement potential energy levels

Journal Article · Mon Feb 23 00:00:00 EST 2015 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.4913313· OSTI ID:22412692

Solovyev, V. V.; Van'kov, A. B.; Kukushkin, I. V. ^[1]; Falson, J.; Kozuka, Y. ^[2]; Zhang, D.; Smet, J. H. ^[3]; Maryenko, D. ^[4]; Tsukazaki, A. ^[5]; Kawasaki, M. ^[2]

---

1. Institute of Solid State Physics, RAS, Chernogolovka 142432 (Russian Federation)
2. Department of Applied Physics and Quantum-Phase Electronics Center (QPEC), University of Tokyo, Tokyo 113-8656 (Japan)
3. Max-Planck-Institut für Festkörperforschung, Heisenbergstrasse 1, D-70569 Stuttgart (Germany)
4. RIKEN Center for Emergent Matter Science (CEMS), Wako 351-0198 (Japan)
5. Institute for Materials Research, Tohoku University, Sendai 980-8577 (Japan)

Low-temperature photoluminescence and reflectance measurements were employed to study the optical transitions present in two-dimensional electron systems confined at Mg{sub x}Zn{sub 1–x}O/ZnO heterojunctions. Transitions involving A- and B-holes and electrons from the two lowest subbands formed within the confinement potential are detected. In the studied density range of 2.0–6.5 × 10{sup 11 }cm{sup −2}, the inter-subband splitting is measured and the first excited electron subband is shown to be empty of electrons.

• OSTI ID: 22412692
• Journal Information: Applied Physics Letters, Vol. 106, Issue 8; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
ELECTRONIC STRUCTURE
ELECTRONS
HETEROJUNCTIONS
HOLES
PHOTOLUMINESCENCE
POTENTIAL ENERGY
POTENTIALS
SPECTRAL REFLECTANCE
TEMPERATURE DEPENDENCE
TWO-DIMENSIONAL SYSTEMS
ZINC OXIDES