skip to main content
OSTI.GOV title logo U.S. Department of Energy
Office of Scientific and Technical Information

Title: Modulations of the plasma uniformity by low frequency sources in a large-area dual frequency inductively coupled plasma based on fluid simulations

Journal Article · · Physics of Plasmas
DOI:https://doi.org/10.1063/1.4921670· OSTI ID:22410352
; ; ;  [1]
  1. Key Laboratory of Materials Modification by Laser, Ion, and Electron Beams (Ministry of Education), School of Physics and Optoelectronic Technology, Dalian University of Technology, Dalian 116024 (China)

As the wafer size increases, dual frequency (DF) inductively coupled plasma (ICP) sources have been proposed as an effective method to achieve large-area uniform plasma processing. A two-dimensional (2D) self-consistent fluid model, combined with an electromagnetic module, has been employed to investigate the influence of the low frequency (LF) source on the plasma radial uniformity in an argon DF discharge. When the DF antenna current is fixed at 10 A, the bulk plasma density decreases significantly with the LF due to the less efficient heating, and the best radial uniformity is obtained at 3.39 MHz. As the LF decreases to 2.26 MHz, the plasma density is characterized by an edge-high profile, and meanwhile the maximum of the electron temperature appears below the outer two-turn coil. Moreover, the axial ion flux at 3.39 MHz is rather uniform in the center region except at the radial edge of the substrate, where a higher ion flux is observed. When the inner five-turn coil frequency is fixed at 2.26 MHz, the plasma density profiles shift from edge-high over uniform to center-high as the LF coil current increases from 6 A to 18 A, and the best plasma uniformity is obtained at 14 A. In addition, the maximum of the electron temperature becomes lower with a second peak appears at the radial position of r = 9 cm at 18 A.

OSTI ID:
22410352
Journal Information:
Physics of Plasmas, Vol. 22, Issue 5; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 1070-664X
Country of Publication:
United States
Language:
English

Similar Records

Effect of different frequency combination on ArF photoresist deformation and silicon dioxide etching in the dual frequency superimposed capacitively coupled plasmas
Journal Article · Sat Jul 15 00:00:00 EDT 2006 · Journal of Vacuum Science and Technology. A, International Journal Devoted to Vacuum, Surfaces, and Films · OSTI ID:22410352

Plasma uniformity and phase-controlled etching in a very high frequency capacitive discharge
Journal Article · Wed Jul 15 00:00:00 EDT 2009 · Journal of Applied Physics · OSTI ID:22410352

450 mm dual frequency capacitively coupled plasma sources: Conventional, graded, and segmented electrodes
Journal Article · Wed Dec 01 00:00:00 EST 2010 · Journal of Applied Physics · OSTI ID:22410352