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Title: Phase-field simulations of GaN growth by selective area epitaxy from complex mask geometries

Abstract

Three-dimensional phase-field simulations of GaN growth by selective area epitaxy were performed. The model includes a crystallographic-orientation-dependent deposition rate and arbitrarily complex mask geometries. The orientation-dependent deposition rate can be determined from experimental measurements of the relative growth rates of low-index crystallographic facets. Growth on various complex mask geometries was simulated on both c-plane and a-plane template layers. Agreement was observed between simulations and experiment, including complex phenomena occurring at the intersections between facets. The sources of the discrepancies between simulated and experimental morphologies were also investigated. The model provides a route to optimize masks and processing conditions during materials synthesis for solar cells, light-emitting diodes, and other electronic and opto-electronic applications.

Authors:
;  [1];  [2];  [3]
  1. Department of Materials Science and Engineering, University of Michigan, 2300 Hayward St., Ann Arbor, Michigan 48109 (United States)
  2. Sandia National Laboratories, Albuquerque, New Mexico 87185 (United States)
  3. Department of Electrical Engineering, Yale University, New Haven, Connecticut 06520 (United States)
Publication Date:
OSTI Identifier:
22410218
Resource Type:
Journal Article
Journal Name:
Journal of Applied Physics
Additional Journal Information:
Journal Volume: 117; Journal Issue: 19; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); Journal ID: ISSN 0021-8979
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; COMPUTERIZED SIMULATION; CRYSTAL GROWTH; CRYSTAL STRUCTURE; DEPOSITION; EPITAXY; GALLIUM NITRIDES; LIGHT EMITTING DIODES; MORPHOLOGY; ORIENTATION; PROCESSING; SYNTHESIS; THREE-DIMENSIONAL LATTICES

Citation Formats

Aagesen, Larry K., Thornton, Katsuyo, E-mail: kthorn@umich.edu, Coltrin, Michael E., and Han, Jung. Phase-field simulations of GaN growth by selective area epitaxy from complex mask geometries. United States: N. p., 2015. Web. doi:10.1063/1.4921053.
Aagesen, Larry K., Thornton, Katsuyo, E-mail: kthorn@umich.edu, Coltrin, Michael E., & Han, Jung. Phase-field simulations of GaN growth by selective area epitaxy from complex mask geometries. United States. doi:10.1063/1.4921053.
Aagesen, Larry K., Thornton, Katsuyo, E-mail: kthorn@umich.edu, Coltrin, Michael E., and Han, Jung. Thu . "Phase-field simulations of GaN growth by selective area epitaxy from complex mask geometries". United States. doi:10.1063/1.4921053.
@article{osti_22410218,
title = {Phase-field simulations of GaN growth by selective area epitaxy from complex mask geometries},
author = {Aagesen, Larry K. and Thornton, Katsuyo, E-mail: kthorn@umich.edu and Coltrin, Michael E. and Han, Jung},
abstractNote = {Three-dimensional phase-field simulations of GaN growth by selective area epitaxy were performed. The model includes a crystallographic-orientation-dependent deposition rate and arbitrarily complex mask geometries. The orientation-dependent deposition rate can be determined from experimental measurements of the relative growth rates of low-index crystallographic facets. Growth on various complex mask geometries was simulated on both c-plane and a-plane template layers. Agreement was observed between simulations and experiment, including complex phenomena occurring at the intersections between facets. The sources of the discrepancies between simulated and experimental morphologies were also investigated. The model provides a route to optimize masks and processing conditions during materials synthesis for solar cells, light-emitting diodes, and other electronic and opto-electronic applications.},
doi = {10.1063/1.4921053},
journal = {Journal of Applied Physics},
issn = {0021-8979},
number = 19,
volume = 117,
place = {United States},
year = {2015},
month = {5}
}