Phase-field simulations of GaN growth by selective area epitaxy from complex mask geometries
Journal Article
·
· Journal of Applied Physics
- Department of Materials Science and Engineering, University of Michigan, 2300 Hayward St., Ann Arbor, Michigan 48109 (United States)
- Sandia National Laboratories, Albuquerque, New Mexico 87185 (United States)
- Department of Electrical Engineering, Yale University, New Haven, Connecticut 06520 (United States)
Three-dimensional phase-field simulations of GaN growth by selective area epitaxy were performed. The model includes a crystallographic-orientation-dependent deposition rate and arbitrarily complex mask geometries. The orientation-dependent deposition rate can be determined from experimental measurements of the relative growth rates of low-index crystallographic facets. Growth on various complex mask geometries was simulated on both c-plane and a-plane template layers. Agreement was observed between simulations and experiment, including complex phenomena occurring at the intersections between facets. The sources of the discrepancies between simulated and experimental morphologies were also investigated. The model provides a route to optimize masks and processing conditions during materials synthesis for solar cells, light-emitting diodes, and other electronic and opto-electronic applications.
- OSTI ID:
- 22410218
- Journal Information:
- Journal of Applied Physics, Journal Name: Journal of Applied Physics Journal Issue: 19 Vol. 117; ISSN JAPIAU; ISSN 0021-8979
- Country of Publication:
- United States
- Language:
- English
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