Direct band-gap measurement on epitaxial Co{sub 2}FeAl{sub 0.5}Si{sub 0.5} Heusler-alloy films

Journal Article · Thu May 07 00:00:00 EDT 2015 · Journal of Applied Physics

DOI:https://doi.org/10.1063/1.4916817· OSTI ID:22410064

Alhuwaymel, Tariq F. ^[1]; Carpenter, Robert; Yu, Chris Nga Tung; Kuerbanjiang, Balati; Lazarov, Vlado K. ^[2]; Abdullah, Ranjdar M.; El-Gomati, Mohamed ^[1]; Hirohata, Atsufumi ^[1]

---

1. Department of Electronics, University of York, York YO10 5DD (United Kingdom)
2. Department of Physics, University of York, York YO10 5DD (United Kingdom)

In this study, a newly developed band-gap measurement technique has been used to characterise epitaxial Co{sub 2}FeAl{sub 0.5}Si{sub 0.5} (CFAS) films. The CFAS films were deposited on MgO(001) substrate by ultra high vacuum molecular beam epitaxy. The band-gap for the as deposited films was found to be ∼110 meV when measured at room temperature. This simple technique provides a macroscopic analysis of the half-metallic properties of a thin film. This allows for simple optimisation of growth and annealing conditions.

• OSTI ID: 22410064
• Journal Information: Journal of Applied Physics, Vol. 117, Issue 17; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0021-8979
• Country of Publication: United States
• Language: English

Related Subjects

75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
ALUMINIUM SILICIDES
ANNEALING
COBALT COMPOUNDS
CRYSTAL STRUCTURE
ELECTRONIC STRUCTURE
ENERGY GAP
HEUSLER ALLOYS
IRON COMPOUNDS
MAGNESIUM OXIDES
MOLECULAR BEAM EPITAXY
SUBSTRATES
TEMPERATURE RANGE 0273-0400 K
THIN FILMS