Magnetotransport properties of a few-layer graphene-ferromagnetic metal junctions in vertical spin valve devices
- Advanced Science Research Center, Japan Atomic Energy Agency, 2-4 Shirakata-Shirane, Tokai, Ibaraki 319-1195 (Japan)
Magnetotransport properties were studied for the vertical spin valve devices with two junctions of permalloy electrodes and a few-layer graphene interlayer. The graphene layer was directly grown on the bottom electrode by chemical vapor deposition. X-ray photoelectron spectroscopy showed that the permalloy surface fully covered with a few-layer graphene is kept free from oxidation and contamination even after dispensing and removing photoresist. This enabled fabrication of the current perpendicular to plane spin valve devices with a well-defined interface between graphene and permalloy. Spin-dependent electron transport measurements revealed a distinct spin valve effect in the devices. The magnetotransport ratio was 0.8% at room temperature and increased to 1.75% at 50 K. Linear current-voltage characteristics and resistance increase with temperature indicated that ohmic contacts are realized at the relevant interfaces.
- OSTI ID:
- 22403029
- Journal Information:
- Journal of Applied Physics, Vol. 117, Issue 17; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0021-8979
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
GENERAL PHYSICS
CHEMICAL VAPOR DEPOSITION
ELECTRIC CONTACTS
ELECTRIC CURRENTS
FERROMAGNETIC MATERIALS
FERROMAGNETISM
GRAPHENE
INTERFACES
LAYERS
MAGNETORESISTANCE
OXIDATION
PERMALLOY
SEMICONDUCTOR JUNCTIONS
SPIN
SURFACES
TEMPERATURE RANGE 0273-0400 K
VALVES
X-RAY PHOTOELECTRON SPECTROSCOPY