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Title: Magnetotransport properties of a few-layer graphene-ferromagnetic metal junctions in vertical spin valve devices

Abstract

Magnetotransport properties were studied for the vertical spin valve devices with two junctions of permalloy electrodes and a few-layer graphene interlayer. The graphene layer was directly grown on the bottom electrode by chemical vapor deposition. X-ray photoelectron spectroscopy showed that the permalloy surface fully covered with a few-layer graphene is kept free from oxidation and contamination even after dispensing and removing photoresist. This enabled fabrication of the current perpendicular to plane spin valve devices with a well-defined interface between graphene and permalloy. Spin-dependent electron transport measurements revealed a distinct spin valve effect in the devices. The magnetotransport ratio was 0.8% at room temperature and increased to 1.75% at 50 K. Linear current-voltage characteristics and resistance increase with temperature indicated that ohmic contacts are realized at the relevant interfaces.

Authors:
; ;  [1]
  1. Advanced Science Research Center, Japan Atomic Energy Agency, 2-4 Shirakata-Shirane, Tokai, Ibaraki 319-1195 (Japan)
Publication Date:
OSTI Identifier:
22403029
Resource Type:
Journal Article
Journal Name:
Journal of Applied Physics
Additional Journal Information:
Journal Volume: 117; Journal Issue: 17; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); Journal ID: ISSN 0021-8979
Country of Publication:
United States
Language:
English
Subject:
71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; CHEMICAL VAPOR DEPOSITION; ELECTRIC CONTACTS; ELECTRIC CURRENTS; FERROMAGNETIC MATERIALS; FERROMAGNETISM; GRAPHENE; INTERFACES; LAYERS; MAGNETORESISTANCE; OXIDATION; PERMALLOY; SEMICONDUCTOR JUNCTIONS; SPIN; SURFACES; TEMPERATURE RANGE 0273-0400 K; VALVES; X-RAY PHOTOELECTRON SPECTROSCOPY

Citation Formats

Entani, Shiro, E-mail: entani.shiro@jaea.go.jp, Naramoto, Hiroshi, and Sakai, Seiji. Magnetotransport properties of a few-layer graphene-ferromagnetic metal junctions in vertical spin valve devices. United States: N. p., 2015. Web. doi:10.1063/1.4918957.
Entani, Shiro, E-mail: entani.shiro@jaea.go.jp, Naramoto, Hiroshi, & Sakai, Seiji. Magnetotransport properties of a few-layer graphene-ferromagnetic metal junctions in vertical spin valve devices. United States. doi:10.1063/1.4918957.
Entani, Shiro, E-mail: entani.shiro@jaea.go.jp, Naramoto, Hiroshi, and Sakai, Seiji. Thu . "Magnetotransport properties of a few-layer graphene-ferromagnetic metal junctions in vertical spin valve devices". United States. doi:10.1063/1.4918957.
@article{osti_22403029,
title = {Magnetotransport properties of a few-layer graphene-ferromagnetic metal junctions in vertical spin valve devices},
author = {Entani, Shiro, E-mail: entani.shiro@jaea.go.jp and Naramoto, Hiroshi and Sakai, Seiji},
abstractNote = {Magnetotransport properties were studied for the vertical spin valve devices with two junctions of permalloy electrodes and a few-layer graphene interlayer. The graphene layer was directly grown on the bottom electrode by chemical vapor deposition. X-ray photoelectron spectroscopy showed that the permalloy surface fully covered with a few-layer graphene is kept free from oxidation and contamination even after dispensing and removing photoresist. This enabled fabrication of the current perpendicular to plane spin valve devices with a well-defined interface between graphene and permalloy. Spin-dependent electron transport measurements revealed a distinct spin valve effect in the devices. The magnetotransport ratio was 0.8% at room temperature and increased to 1.75% at 50 K. Linear current-voltage characteristics and resistance increase with temperature indicated that ohmic contacts are realized at the relevant interfaces.},
doi = {10.1063/1.4918957},
journal = {Journal of Applied Physics},
issn = {0021-8979},
number = 17,
volume = 117,
place = {United States},
year = {2015},
month = {5}
}