Electric field and substrate–induced modulation of spin-polarized transport in graphene nanoribbons on A3B5 semiconductors

Journal Article · Thu May 07 04:00:00 EDT 2015 · Journal of Applied Physics

DOI:https://doi.org/10.1063/1.4919920· OSTI ID:22402995

Ershov, Igor V. ^[1]; Hieu, Nguyen N. ^[2]

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1. Don State Technical University, 1 Gagarin Sq, 344000 Rostov on Don (Russian Federation)
2. Institute of Research and Development, Duy Tan University, Da Nang (Viet Nam)

In this work, we present the density functional theory calculations of the effect of an oriented electric field on the electronic structure and spin-polarized transport in a one dimensional (1D) zigzag graphene nanoribbon (ZGNR) channel placed on a wide bandgap semiconductor of the A3B5 type. Our calculations show that carrier mobility in the 1D semiconductor channel of the ZGNR/A3B5(0001) type is in the range from 1.7×10{sup 4} to 30.5×10{sup 4} cm{sup 2}/Vs and can be controlled by an electric field. In particular, at the critical value of the positive potential, even though hole mobility in an one-dimensional 8-ZGNR/h-BN semiconductor channel for spin down electron subsystems is equal to zero, hole mobility can be increased to 4.1×10{sup 5} cm{sup 2}/Vs for spin up electron subsystems. We found that band gap and carrier mobility in a 1D semiconductor channel of the ZGNR/A3B5(0001) type depend strongly on an external electric field. With these extraordinary properties, ZGNR/A3B5(0001) can become a promising materials for application in nanospintronic devices.

• OSTI ID: 22402995
• Journal Information: Journal of Applied Physics, Journal Name: Journal of Applied Physics Journal Issue: 17 Vol. 117; ISSN JAPIAU; ISSN 0021-8979
• Country of Publication: United States
• Language: English

Related Subjects

71 CLASSICAL AND QUANTUM MECHANICS
GENERAL PHYSICS
77 NANOSCIENCE AND NANOTECHNOLOGY
BORON NITRIDES
CARRIER MOBILITY
DENSITY FUNCTIONAL METHOD
ELECTRIC FIELDS
ELECTRONIC STRUCTURE
ELECTRONS
GRAPHENE
HOLE MOBILITY
MODULATION
NANOSTRUCTURES
POTENTIALS
SEMICONDUCTOR MATERIALS
SPIN
SPIN ORIENTATION
SUBSTRATES