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Purification of CdZnTe by electromigration

Journal Article · · Journal of Applied Physics
DOI:https://doi.org/10.1063/1.4917460· OSTI ID:22402854
;  [1]; ;  [2]; ; ;  [3]
  1. Department of Applied Physics, Korea University, Sejong 339-700 (Korea, Republic of)
  2. AbyzR Corporation, Gyeonggi-do 445-811 (Korea, Republic of)
  3. Brookhaven National Laboratory, Upton, New York 11973 (United States)
Electro-migration of ionized/electrically active impurities in CdZnTe (CZT) was successfully demonstrated at elevated temperature with an electric field of 20 V/mm. Copper, which exists in positively charged states, electro-migrated at a speed of 15 μm/h in an electric field of 20 V/mm. A notable variation in impurity concentration along the growth direction with the segregation tendency of the impurities was observed in an electro-migrated CZT boule. Notably, both Ga and Fe, which exist in positively charged states, exhibited the opposite distribution to that of their segregation tendency in Cd(Zn)Te. A CZT detector fabricated from the middle portion of the electro-migrated CZT boule showed an improved mobility-lifetime product of 0.91 × 10{sup −2} cm{sup 2}/V, compared with that of 1.4 × 10{sup −3} cm{sup 2}/V, observed in an as-grown (non-electro-migrated) CZT detector. The optimum radiation detector material would have minimum concentration of deep traps required for compensation.
OSTI ID:
22402854
Journal Information:
Journal of Applied Physics, Journal Name: Journal of Applied Physics Journal Issue: 14 Vol. 117; ISSN JAPIAU; ISSN 0021-8979
Country of Publication:
United States
Language:
English

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