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Title: Erratum: “Electronic structure and thermoelectric properties of p-type Ag-doped Mg{sub 2}Sn and Mg{sub 2}Sn{sub 1−x}Si{sub x} (x = 0.05, 0.1)” [J. Appl. Phys. 116, 153706 (2014)]

Journal Article · · Journal of Applied Physics
DOI:https://doi.org/10.1063/1.4901322· OSTI ID:22402606
;  [1];  [1];  [2]
  1. Department of Mechanical and Aerospace Engineering, The Ohio State University, Columbus, Ohio 43210 (United States)
  2. AGH University of Science and Technology, Faculty of Physics and Applied Computer Science, Al. Mickiewicza 30, 30-059 Krakow (Poland)

No abstract prepared.

OSTI ID:
22402606
Journal Information:
Journal of Applied Physics, Vol. 116, Issue 17; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0021-8979
Country of Publication:
United States
Language:
English