Erratum: “Electronic structure and thermoelectric properties of p-type Ag-doped Mg{sub 2}Sn and Mg{sub 2}Sn{sub 1−x}Si{sub x} (x = 0.05, 0.1)” [J. Appl. Phys. 116, 153706 (2014)]
Journal Article
·
· Journal of Applied Physics
- Department of Mechanical and Aerospace Engineering, The Ohio State University, Columbus, Ohio 43210 (United States)
- AGH University of Science and Technology, Faculty of Physics and Applied Computer Science, Al. Mickiewicza 30, 30-059 Krakow (Poland)
No abstract prepared.
- OSTI ID:
- 22402606
- Journal Information:
- Journal of Applied Physics, Vol. 116, Issue 17; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0021-8979
- Country of Publication:
- United States
- Language:
- English
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