Electronic structure of C and N co-doped TiO{sub 2}: A combined hard x-ray photoemission spectroscopy and density functional theory study
- Department of Physics and Astronomy, University of Delaware, Newark, Delaware 19716 (United States)
- Center for Computational Studies of Advanced Electronic Material Properties, Yonsei University, Seoul 120-749 (Korea, Republic of)
- National Synchrotron Light Source, Brookhaven National Laboratory, Upton, New York 11973 (United States)
- National Institute of Standards and Technology, Gaithersburg, Maryland 20899 (United States)
We have studied the electronic structure of C and N co-doped TiO{sub 2} using hard x-ray photoelectron spectroscopy and first-principles density functional theory calculations. Our results reveal overlap of the 2p states of O, N, and C in the system which shifts the valence band maximum towards the Fermi level. Combined with optical data we show that co-doping is an effective route for band gap reduction in TiO{sub 2}. Comparison of the measured valence band with theoretical photoemission density of states reveals the possibility of C on Ti and N on O site.
- OSTI ID:
- 22402392
- Journal Information:
- Applied Physics Letters, Journal Name: Applied Physics Letters Journal Issue: 22 Vol. 105; ISSN APPLAB; ISSN 0003-6951
- Country of Publication:
- United States
- Language:
- English
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