Multi-stacks of epitaxial GeSn self-assembled dots in Si: Structural analysis

Journal Article · Sat Mar 28 04:00:00 EDT 2015 · Journal of Applied Physics

DOI:https://doi.org/10.1063/1.4915939· OSTI ID:22399364

Oliveira, F. ^[1]; Fischer, I. A.; Schulze, J. ^[1]; Benedetti, A. ^[2]; Cerqueira, M. F.; Vasilevskiy, M. I. ^[3]; Stefanov, S.; Chiussi, S. ^[4]

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1. Institute for Semiconductor Engineering, University of Stuttgart, 70569 Stuttgart (Germany)
2. CACTI, Univ. de Vigo, Campus Universitario Lagoas Marcosende 15, Vigo (Spain)
3. Centre of Physics, University of Minho, Campus de Gualtar, 4710-057 Braga (Portugal)
4. Dpto. Fisica Aplicada, Univ. de Vigo, Rua Maxwell s/n, Campus Universitario Lagoas Marcosende, Vigo (Spain)

We report on the growth and structural and morphologic characterization of stacked layers of self-assembled GeSn dots grown on Si (100) substrates by molecular beam epitaxy at low substrate temperature T = 350 °C. Samples consist of layers (from 1 up to 10) of Ge{sub 0.96}Sn{sub 0.04} self-assembled dots separated by Si spacer layers, 10 nm thick. Their structural analysis was performed based on transmission electron microscopy, atomic force microscopy, and Raman scattering. We found that up to 4 stacks of dots could be grown with good dot layer homogeneity, making the GeSn dots interesting candidates for optoelectronic device applications.

• OSTI ID: 22399364
• Journal Information: Journal of Applied Physics, Journal Name: Journal of Applied Physics Journal Issue: 12 Vol. 117; ISSN JAPIAU; ISSN 0021-8979
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
ATOMIC FORCE MICROSCOPY
CRYSTAL GROWTH
GERMANIUM
INTERMETALLIC COMPOUNDS
LAYERS
MOLECULAR BEAM EPITAXY
OPTOELECTRONIC DEVICES
RAMAN EFFECT
SILICON
STACKS
SUBSTRATES
TIN
TRANSMISSION ELECTRON MICROSCOPY