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Title: Multi-stacks of epitaxial GeSn self-assembled dots in Si: Structural analysis

Abstract

We report on the growth and structural and morphologic characterization of stacked layers of self-assembled GeSn dots grown on Si (100) substrates by molecular beam epitaxy at low substrate temperature T = 350 °C. Samples consist of layers (from 1 up to 10) of Ge{sub 0.96}Sn{sub 0.04} self-assembled dots separated by Si spacer layers, 10 nm thick. Their structural analysis was performed based on transmission electron microscopy, atomic force microscopy, and Raman scattering. We found that up to 4 stacks of dots could be grown with good dot layer homogeneity, making the GeSn dots interesting candidates for optoelectronic device applications.

Authors:
 [1];  [2]; ;  [1];  [3]; ;  [4]; ;  [5]
  1. Institute for Semiconductor Engineering, University of Stuttgart, 70569 Stuttgart (Germany)
  2. (Portugal)
  3. CACTI, Univ. de Vigo, Campus Universitario Lagoas Marcosende 15, Vigo (Spain)
  4. Centre of Physics, University of Minho, Campus de Gualtar, 4710-057 Braga (Portugal)
  5. Dpto. Fisica Aplicada, Univ. de Vigo, Rua Maxwell s/n, Campus Universitario Lagoas Marcosende, Vigo (Spain)
Publication Date:
OSTI Identifier:
22399364
Resource Type:
Journal Article
Resource Relation:
Journal Name: Journal of Applied Physics; Journal Volume: 117; Journal Issue: 12; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; ATOMIC FORCE MICROSCOPY; CRYSTAL GROWTH; GERMANIUM; INTERMETALLIC COMPOUNDS; LAYERS; MOLECULAR BEAM EPITAXY; OPTOELECTRONIC DEVICES; RAMAN EFFECT; SILICON; STACKS; SUBSTRATES; TIN; TRANSMISSION ELECTRON MICROSCOPY

Citation Formats

Oliveira, F., Centre of Physics, University of Minho, Campus de Gualtar, 4710-057 Braga, Fischer, I. A., Schulze, J., Benedetti, A., Cerqueira, M. F., Vasilevskiy, M. I., Stefanov, S., and Chiussi, S. Multi-stacks of epitaxial GeSn self-assembled dots in Si: Structural analysis. United States: N. p., 2015. Web. doi:10.1063/1.4915939.
Oliveira, F., Centre of Physics, University of Minho, Campus de Gualtar, 4710-057 Braga, Fischer, I. A., Schulze, J., Benedetti, A., Cerqueira, M. F., Vasilevskiy, M. I., Stefanov, S., & Chiussi, S. Multi-stacks of epitaxial GeSn self-assembled dots in Si: Structural analysis. United States. doi:10.1063/1.4915939.
Oliveira, F., Centre of Physics, University of Minho, Campus de Gualtar, 4710-057 Braga, Fischer, I. A., Schulze, J., Benedetti, A., Cerqueira, M. F., Vasilevskiy, M. I., Stefanov, S., and Chiussi, S. 2015. "Multi-stacks of epitaxial GeSn self-assembled dots in Si: Structural analysis". United States. doi:10.1063/1.4915939.
@article{osti_22399364,
title = {Multi-stacks of epitaxial GeSn self-assembled dots in Si: Structural analysis},
author = {Oliveira, F. and Centre of Physics, University of Minho, Campus de Gualtar, 4710-057 Braga and Fischer, I. A. and Schulze, J. and Benedetti, A. and Cerqueira, M. F. and Vasilevskiy, M. I. and Stefanov, S. and Chiussi, S.},
abstractNote = {We report on the growth and structural and morphologic characterization of stacked layers of self-assembled GeSn dots grown on Si (100) substrates by molecular beam epitaxy at low substrate temperature T = 350 °C. Samples consist of layers (from 1 up to 10) of Ge{sub 0.96}Sn{sub 0.04} self-assembled dots separated by Si spacer layers, 10 nm thick. Their structural analysis was performed based on transmission electron microscopy, atomic force microscopy, and Raman scattering. We found that up to 4 stacks of dots could be grown with good dot layer homogeneity, making the GeSn dots interesting candidates for optoelectronic device applications.},
doi = {10.1063/1.4915939},
journal = {Journal of Applied Physics},
number = 12,
volume = 117,
place = {United States},
year = 2015,
month = 3
}
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