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Title: Doping effect of nano-Ho{sub 2}O{sub 3} and naphthalene in MgB{sub 2} superconductor prepared by powder-in-sealed-tube method

Journal Article · · Journal of Applied Physics
DOI:https://doi.org/10.1063/1.4915348· OSTI ID:22399303

The effect on crystal structure, critical temperature (T{sub C}), and critical current density (J{sub C}) of bulk MgB{sub 2} doped with nano-Ho{sub 2}O{sub 3} and naphthalene was studied. Among all the samples studied, the sample doped with 2.5 wt. % nano-Ho{sub 2}O{sub 3} have shown the best field dependent critical current density [J{sub C}(H)], i.e., 0.77 × 10{sup 5 }A/cm{sup 2} at 2 T and 10 K. While naphthalene doped MgB{sub 2} sample has shown the least J{sub C}(H) characteristics. The improved J{sub C}(H) characteristics in the nano-Ho{sub 2}O{sub 3} doped MgB{sub 2} samples are attributed to improved flux pinning properties due to the formation of HoB{sub 4} and in naphthalene doped MgB{sub 2} samples. The slight lower T{sub C} value (37.01 K) in naphthalene doped samples is attributed to the occurrence of lattice defect by the substitution of carbon at boron site of MgB{sub 2} superconductor. Lower ΔT{sub C} value implies the lesser anisotropy in all the synthesized samples. The flux pinning force density (F{sub P}/F{sub Pmax}) curves are theoretically analyzed using Dew-Hughes model. The result revealed that point pinning is the dominant pinning mechanism for nano-Ho{sub 2}O{sub 3} doped MgB{sub 2} samples, while, surface and grain boundary pinning become dominant with increasing naphthalene addition in nano-Ho{sub 2}O{sub 3} doped MgB{sub 2} samples.

OSTI ID:
22399303
Journal Information:
Journal of Applied Physics, Vol. 117, Issue 11; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0021-8979
Country of Publication:
United States
Language:
English