Temperature dependent transport characteristics of graphene/n-Si diodes

Journal Article · Sun Dec 28 00:00:00 EST 2014 · Journal of Applied Physics

DOI:https://doi.org/10.1063/1.4905110· OSTI ID:22399182

Parui, S.; Ruiter, R.; Zomer, P. J.; Wojtaszek, M.; Wees, B. J. van

Realizing an optimal Schottky interface of graphene on Si is challenging, as the electrical transport strongly depends on the graphene quality and the fabrication processes. Such interfaces are of increasing research interest for integration in diverse electronic devices as they are thermally and chemically stable in all environments, unlike standard metal/semiconductor interfaces. We fabricate such interfaces with n-type Si at ambient conditions and find their electrical characteristics to be highly rectifying, with minimal reverse leakage current (<10{sup −10} A) and rectification of more than 10{sup 6}. We extract Schottky barrier height of 0.69 eV for the exfoliated graphene and 0.83 eV for the CVD graphene devices at room temperature. The temperature dependent electrical characteristics suggest the influence of inhomogeneities at the graphene/n-Si interface. A quantitative analysis of the inhomogeneity in Schottky barrier heights is presented using the potential fluctuation model proposed by Werner and Güttler.

• OSTI ID: 22399182
• Journal Information: Journal of Applied Physics, Vol. 116, Issue 24; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0021-8979
• Country of Publication: United States
• Language: English

Related Subjects

75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
71 CLASSICAL AND QUANTUM MECHANICS
GENERAL PHYSICS
CHEMICAL VAPOR DEPOSITION
DIFFUSION BARRIERS
ELECTRIC CONDUCTIVITY
ELECTRONIC EQUIPMENT
EV RANGE
FABRICATION
FLUCTUATIONS
GRAPHENE
INTERFACES
LEAKAGE CURRENT
SEMICONDUCTOR MATERIALS
SILICON
TEMPERATURE DEPENDENCE