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Title: Quantum confinement in transition metal oxide quantum wells

Journal Article · · Applied Physics Letters
DOI:https://doi.org/10.1063/1.4921013· OSTI ID:22399048
; ; ; ; ;  [1]; ;  [2]
  1. Department of Physics, New Mexico State University, Las Cruces, New Mexico 88003 (United States)
  2. Materials Science and Technology Division, Oak Ridge National Laboratory, Oak Ridge, Tennessee 37831 (United States)

We report on the quantum confinement in SrTiO{sub 3} (STO) quantum wells (QWs) grown by molecular beam epitaxy. The QW structure consists of LaAlO{sub 3} (LAO) and STO layers grown on LAO substrate. Structures with different QW thicknesses ranging from two to ten unit cells were grown and characterized. Optical properties (complex dielectric function) were measured by spectroscopic ellipsometry in the range of 1.0 eV–6.0 eV at room temperature. We observed that the absorption edge was blue-shifted by approximately 0.39 eV as the STO quantum well thickness was reduced to two unit cells. This demonstrates that the energy level of the first sub-band can be controlled by the QW thickness in a complex oxide material.

OSTI ID:
22399048
Journal Information:
Applied Physics Letters, Vol. 106, Issue 19; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
Country of Publication:
United States
Language:
English

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Large positive linear magnetoresistance in the two-dimensional t 2g electron gas at the EuO/SrTiO3 interface journal May 2018
Strain-induced indirect-to-direct bandgap transition in an np-type LaAlO 3 /SrTiO 3 (110) superlattice journal January 2019
Monolithic integration of transition metal oxide multiple quantum wells on silicon (001) journal April 2019
Designing near-infrared electro-optical devices from the SrTiO 3 /LaAlO 3 materials system journal January 2019