Air-stable solution-processed n-channel organic thin film transistors with polymer-enhanced morphology

He, Zhengran; Shaik, Shoieb; Bi, Sheng; Li, Dawen; Chen, Jihua

doi:10.1063/1.4919677

Air-stable solution-processed n-channel organic thin film transistors with polymer-enhanced morphology

Journal Article · Mon May 04 00:00:00 EDT 2015 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.4919677· OSTI ID:22399019

He, Zhengran; Shaik, Shoieb; Bi, Sheng; Li, Dawen ^[1]; Chen, Jihua ^[2]

Department of Electrical and Computer Engineering, Center for Materials for Information Technology, The University of Alabama, Tuscaloosa, Alabama 35487 (United States)
Center for Nanophase Materials Sciences, Oak Ridge National Laboratory, Oak Ridge, Tennessee 37831 (United States)

N,N′-1H,1H-perfluorobutyl dicyanoperylenecarboxydiimide (PDIF-CN{sub 2}) is an n-type semiconductor exhibiting high electron mobility and excellent air stability. However, the reported electron mobility based on spin-coated PDIF-CN{sub 2} film is much lower than the value of PDIF-CN{sub 2} single crystals made from vapor phase deposition, indicating significant room for mobility enhancement. In this study, various insulating polymers, including poly(vinyl alcohol), poly(methyl methacrylate) (PMMA), and poly(alpha-methylstyrene) (PαMS), are pre-coated on silicon substrate aiming to enhance the morphology of the PDIF-CN{sub 2} thin film, thereby improving the charge transport and air stability. Atomic force microscopy images reveal that with the pre-deposition of PαMS or PMMA polymers, the morphology of the PDIF-CN{sub 2} polycrystalline films is optimized in semiconducting crystal connectivity, domain size, and surface roughness, which leads to significant improvement of organic thin-film transistor (OTFT) performance. Particularly, an electron mobility of up to 0.55 cm{sup 2}/V s has been achieved from OTFTs based on the PDIF-CN{sub 2} film with the pre-deposition of PαMS polymer.

OSTI ID:: 22399019

Journal Information:: Applied Physics Letters, Journal Name: Applied Physics Letters Journal Issue: 18 Vol. 106; ISSN APPLAB; ISSN 0003-6951

Country of Publication:: United States

Language:: English

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Related Subjects

75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
ATOMIC FORCE MICROSCOPY
CHARGE TRANSPORT
CYANIDES
DEPOSITION
ELECTRON MOBILITY
METHACRYLIC ACID ESTERS
MONOCRYSTALS
MORPHOLOGY
PMMA
POLYCRYSTALS
PVA
ROUGHNESS
SEMICONDUCTOR MATERIALS
SILICON
SPIN
SUBSTRATES
SURFACES
THIN FILMS
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Air-stable solution-processed n-channel organic thin film transistors with polymer-enhanced morphology

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