Investigation of chemical distribution in the oxide bulk layer in Ti/HfO{sub 2}/Pt memory devices using x-ray photoelectron spectroscopy
- School of Physics, Shandong University, Jinan, Shandong 250100 (China)
Resistive switching (RS) of Ti/HfO{sub 2}/Pt memory devices was studied using X-ray photoelectron spectroscopy. Hf{sup 4+} monotonously decreases with depth increasing towards to HfO{sub 2}/Pt interface in low resistance state, while a fluctuation distribution of Hf{sup 4+} is shown in high resistance state (HRS) and in the pristine Ti/HfO{sub 2}/Pt devices (without any SET or RESET process). It is explained by the existence of locally accumulated oxygen vacancies (clusters) in the oxide bulk layer in HRS and pristine states. A dynamic model of RS processes was proposed that the oxygen vacancy clusters dominantly determines the resistivity by the connecting/rupture between the neighbor cluster sites in the bulk.
- OSTI ID:
- 22398979
- Journal Information:
- Applied Physics Letters, Journal Name: Applied Physics Letters Journal Issue: 17 Vol. 106; ISSN APPLAB; ISSN 0003-6951
- Country of Publication:
- United States
- Language:
- English
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