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Dopant controlled trap-filling and conductivity enhancement in an electron-transport polymer

Journal Article · · Applied Physics Letters
DOI:https://doi.org/10.1063/1.4918627· OSTI ID:22398936
;  [1]; ; ;  [2]
  1. Department of Electrical Engineering, Princeton University, Princeton, New Jersey 08544-5263 (United States)
  2. Center for Organic Photonics and Electronics and School of Chemistry and Biochemistry, Georgia Institute of Technology, Atlanta, Georgia 30332-0400 (United States)
Charge transport in organic semiconductors is often inhibited by the presence of tail states that extend into the band gap of a material and act as traps for charge carriers. This work demonstrates the passivation of acceptor tail states by solution processing of ultra-low concentrations of a strongly reducing air-stable organometallic dimer, the pentamethylrhodocene dimer, [RhCp*Cp]{sub 2}, into the electron transport polymer poly([N,N′-bis(2-octyldodecyl)-naphthalene-1,4,5,8-bis(dicarboximide) -2,6-diyl]-alt-5,5′-(2,2′-bithiophene)), P(NDI{sub 2}OD-T{sub 2}). Variable-temperature current-voltage measurements of n-doped P(NDI{sub 2}OD-T{sub 2}) are presented with doping concentration varied through two orders of magnitude. Systematic variation of the doping parameter is shown to lower the activation energy for hopping transport and enhance film conductivity and electron mobility.
OSTI ID:
22398936
Journal Information:
Applied Physics Letters, Journal Name: Applied Physics Letters Journal Issue: 16 Vol. 106; ISSN APPLAB; ISSN 0003-6951
Country of Publication:
United States
Language:
English