Strain-compensated (Ga,In)N/(Al,Ga)N/GaN multiple quantum wells for improved yellow/amber light emission

Journal Article · Mon Apr 06 04:00:00 EDT 2015 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.4917222· OSTI ID:22398844

Lekhal, K.; De Mierry, P.; Vennéguès, P. ^[1]; Ngo, H. T.; Rosales, D.; Gil, B. ^[2]; Hussain, S. ^[1]

---

1. CRHEA-CNRS, Centre de Recherche sur l'Hétéro-Epitaxie et ses Applications, Centre National de la Recherche Scientifique, Valbonne 06560 (France)
2. Laboratoire Charles Coulomb, CNRS-INP-UMR 5221, Université Montpellier 2, F-34095 Montpellier (France)

Yellow/amber (570–600 nm) emitting In{sub x}Ga{sub 1−x}N/Al{sub y}Ga{sub 1−y}N/GaN multiple quantum wells (QWs) have been grown by metal organic chemical vapor deposition on GaN-on- sapphire templates. When the (Al,Ga)N thickness of the barrier increases, the room temperature photoluminescence is red-shifted while its yield increases. This is attributed to an increase of the QW internal electric field and an improvement of the material quality due to the compensation of the compressive strain of the In{sub x}Ga{sub 1−x}N QWs by the Al{sub y}Ga{sub 1−y}N layers, respectively.

• OSTI ID: 22398844
• Journal Information: Applied Physics Letters, Journal Name: Applied Physics Letters Journal Issue: 14 Vol. 106; ISSN APPLAB; ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

77 NANOSCIENCE AND NANOTECHNOLOGY
ALUMINIUM COMPOUNDS
CHEMICAL VAPOR DEPOSITION
ELECTRIC FIELDS
GALLIUM NITRIDES
HETEROJUNCTIONS
INDIUM COMPOUNDS
INTERFACES
LAYERS
ORGANOMETALLIC COMPOUNDS
PHOTOLUMINESCENCE
QUANTUM WELLS
RED SHIFT
SAPPHIRE
STRAINS
TEMPERATURE RANGE 0273-0400 K
VISIBLE RADIATION
YTTRIUM NITRIDES