Effects of graphene defect on electronic structures of its interface with organic semiconductor

Journal Article · Mon Mar 30 04:00:00 EDT 2015 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.4916736· OSTI ID:22398836

Yang, Qing-Dan; Wang, Chundong; Mo, Hin-Wai; Lo, Ming-Fai; Yuen, Muk Fung; Ng, Tsz-Wai; Zhang, Wen-Jun; Lee, Chun-Sing ^[1]; Dou, Wei-Dong ^[1]; Tsang, Sai-Wing ^[2]

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1. Department of Physics and Materials Science, Center of Super-Diamond and Advanced Films (COSDAF), City University of Hong Kong (Hong Kong)
2. Department of Physics and Materials Science, City University of Hong Kong (Hong Kong)

Electronic structures of copper hexadecafluorophthalocyanine (F{sub 16}CuPc)/graphene with different defect density were studied with ultra-violet photoelectron spectroscopy. We showed that the charge transfer interaction and charge flow direction can be interestingly tuned by controlling the defect density of graphene through time-controlled H{sub 2} plasma treatment. By increasing the treatment time of H{sub 2} plasma from 30 s to 5 min, both the interface surface dipole and the electron transporting barrier at F{sub 16}CuPc/graphene interface are significantly reduced from 0.86 to 0.56 eV and 0.71 to 0.29 eV, respectively. These results suggested that graphene's defect control is a simple approach for tuning electronic properties of organic/graphene interfaces.

• OSTI ID: 22398836
• Journal Information: Applied Physics Letters, Journal Name: Applied Physics Letters Journal Issue: 13 Vol. 106; ISSN APPLAB; ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
COPPER COMPOUNDS
CRYSTAL DEFECTS
DIFFUSION BARRIERS
DIPOLES
ELECTRONIC STRUCTURE
ELECTRONS
EV RANGE
GRAPHENE
HYDROGEN
INTERFACES
ORGANIC SEMICONDUCTORS
PHOTOELECTRON SPECTROSCOPY
PHTHALOCYANINES
SURFACES