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Title: Insulating-layer formation of metallic LaNiO{sub 3} on Nb-doped SrTiO{sub 3} substrate

Abstract

We investigated the electronic structures of strongly correlated metallic LaNiO{sub 3} (LNO) and semiconducting Nb-doped SrTiO{sub 3} (Nb:STO) heterostructures by varying the LNO film thickness using in situ photoemission spectroscopy. We found that, contrary to other interfaces with SrTiO{sub 3} and LaAlO{sub 3}, insulating LNO layers are formed between metallic LNO layers and Nb:STO. Such behavior seems to be related with an electron transfer from Nb:STO to LNO due to Schottky-barrier formation at the interface.

Authors:
; ; ; ; ; ;  [1];  [2];  [3];  [4]; ; ;  [5]
  1. Center for Correlated Electron Systems, Institute for Basic Science (IBS), Seoul 151-747 (Korea, Republic of)
  2. (Korea, Republic of)
  3. Department of Physics, University of Seoul, Seoul 130-743 (Korea, Republic of)
  4. (ALS), E. O. Lawrence Berkeley National Laboratory, Berkeley, California 94720 (United States)
  5. Advanced Light Source (ALS), E. O. Lawrence Berkeley National Laboratory, Berkeley, California 94720 (United States)
Publication Date:
OSTI Identifier:
22398764
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 106; Journal Issue: 12; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; ALUMINATES; DIFFUSION BARRIERS; DOPED MATERIALS; ELECTRON TRANSFER; ELECTRONIC STRUCTURE; FILMS; HETEROJUNCTIONS; INTERFACES; LANTHANUM COMPOUNDS; LAYERS; NIOBATES; PHOTOELECTRON SPECTROSCOPY; STRONTIUM TITANATES; SUBSTRATES

Citation Formats

Yoo, Hyang Keun, Kim, Hyeong-Do, E-mail: hdkim6612@snu.ac.kr, Sohn, Chang Hee, Sinn, Soobin, Oh, Ji Seop, Kuo, Cheng-Tai, Noh, Tae Won, Department of Physics and Astronomy, Seoul National University, Seoul 151-747, Chang, Young Jun, Advanced Light Source, Moreschini, Luca, Bostwick, Aaron, and Rotenberg, Eli. Insulating-layer formation of metallic LaNiO{sub 3} on Nb-doped SrTiO{sub 3} substrate. United States: N. p., 2015. Web. doi:10.1063/1.4916225.
Yoo, Hyang Keun, Kim, Hyeong-Do, E-mail: hdkim6612@snu.ac.kr, Sohn, Chang Hee, Sinn, Soobin, Oh, Ji Seop, Kuo, Cheng-Tai, Noh, Tae Won, Department of Physics and Astronomy, Seoul National University, Seoul 151-747, Chang, Young Jun, Advanced Light Source, Moreschini, Luca, Bostwick, Aaron, & Rotenberg, Eli. Insulating-layer formation of metallic LaNiO{sub 3} on Nb-doped SrTiO{sub 3} substrate. United States. doi:10.1063/1.4916225.
Yoo, Hyang Keun, Kim, Hyeong-Do, E-mail: hdkim6612@snu.ac.kr, Sohn, Chang Hee, Sinn, Soobin, Oh, Ji Seop, Kuo, Cheng-Tai, Noh, Tae Won, Department of Physics and Astronomy, Seoul National University, Seoul 151-747, Chang, Young Jun, Advanced Light Source, Moreschini, Luca, Bostwick, Aaron, and Rotenberg, Eli. Mon . "Insulating-layer formation of metallic LaNiO{sub 3} on Nb-doped SrTiO{sub 3} substrate". United States. doi:10.1063/1.4916225.
@article{osti_22398764,
title = {Insulating-layer formation of metallic LaNiO{sub 3} on Nb-doped SrTiO{sub 3} substrate},
author = {Yoo, Hyang Keun and Kim, Hyeong-Do, E-mail: hdkim6612@snu.ac.kr and Sohn, Chang Hee and Sinn, Soobin and Oh, Ji Seop and Kuo, Cheng-Tai and Noh, Tae Won and Department of Physics and Astronomy, Seoul National University, Seoul 151-747 and Chang, Young Jun and Advanced Light Source and Moreschini, Luca and Bostwick, Aaron and Rotenberg, Eli},
abstractNote = {We investigated the electronic structures of strongly correlated metallic LaNiO{sub 3} (LNO) and semiconducting Nb-doped SrTiO{sub 3} (Nb:STO) heterostructures by varying the LNO film thickness using in situ photoemission spectroscopy. We found that, contrary to other interfaces with SrTiO{sub 3} and LaAlO{sub 3}, insulating LNO layers are formed between metallic LNO layers and Nb:STO. Such behavior seems to be related with an electron transfer from Nb:STO to LNO due to Schottky-barrier formation at the interface.},
doi = {10.1063/1.4916225},
journal = {Applied Physics Letters},
number = 12,
volume = 106,
place = {United States},
year = {Mon Mar 23 00:00:00 EDT 2015},
month = {Mon Mar 23 00:00:00 EDT 2015}
}