Bias-enhanced post-treatment process for enhancing the electron field emission properties of ultrananocrystalline diamond films
- Graduate Institute of Electro-Optical Engineering and Department of Electronic Engineering, National Taiwan University of Science and Technology, Taipei 106, Taiwan (China)
- Department of Materials Science and Engineering, National Tsing Hua University, Hsinchu 300, Taiwan (China)
- Scientific Research Division, National Synchrotron Radiation Research Center, Hsinchu 300, Taiwan (China)
The electron field emission (EFE) properties of ultrananocrystalline diamond films were markedly improved via the bias-enhanced plasma post-treatment (bep) process. The bep-process induced the formation of hybrid-granular structure of the diamond (bep-HiD) films with abundant nano-graphitic phase along the grain boundaries that increased the conductivity of the films. Moreover, the utilization of Au-interlayer can effectively suppress the formation of resistive amorphous-carbon (a-C) layer, thereby enhancing the transport of electrons crossing the diamond-to-Si interface. Therefore, bep-HiD/Au/Si films exhibit superior EFE properties with low turn-on field of E{sub 0} = 2.6 V/μm and large EFE current density of J{sub e} = 3.2 mA/cm{sup 2} (at 5.3 V/μm)
- OSTI ID:
- 22395747
- Journal Information:
- Applied Physics Letters, Vol. 106, Issue 11; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
- Country of Publication:
- United States
- Language:
- English
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