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Title: Nanosized perpendicular organic spin-valves

Abstract

A fabrication process for perpendicular organic spin-valve devices based on the organic semiconductor Alq3 has been developed which offers the possibility to achieve active device areas of less than 500 × 500 nm{sup 2} and is flexible in terms of material choice for the active layers. Characterization of the resulting devices shows a large magnetoresistance of sometimes more than 100%, however with equally large variation from device to device. Comparison with large area spin-valves indicates that the magnetoresistance of both large and small devices most likely originates from tunneling through pinholes and tunneling magnetoresistance.

Authors:
; ; ;  [1];  [2];  [1];  [3]
  1. Institut für Physik, Martin Luther University Halle-Wittenberg, 06099 Halle (Saale) (Germany)
  2. Interdisziplinäres Zentrum für Materialwissenschaften, Martin Luther University Halle-Wittenberg, 06099 Halle (Saale) (Germany)
  3. (Saale) (Germany)
Publication Date:
OSTI Identifier:
22395715
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 106; Journal Issue: 10; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; ALUMINIUM COMPOUNDS; COMPARATIVE EVALUATIONS; FABRICATION; MAGNETORESISTANCE; NANOSTRUCTURES; ORGANIC SEMICONDUCTORS; SPIN; TUNNEL EFFECT; VALVES; VARIATIONS

Citation Formats

Göckeritz, Robert, Homonnay, Nico, Müller, Alexander, Richter, Tim, Fuhrmann, Bodo, Schmidt, Georg, E-mail: georg.schmidt@physik.uni-halle.de, and Interdisziplinäres Zentrum für Materialwissenschaften, Martin Luther University Halle-Wittenberg, 06099 Halle. Nanosized perpendicular organic spin-valves. United States: N. p., 2015. Web. doi:10.1063/1.4914830.
Göckeritz, Robert, Homonnay, Nico, Müller, Alexander, Richter, Tim, Fuhrmann, Bodo, Schmidt, Georg, E-mail: georg.schmidt@physik.uni-halle.de, & Interdisziplinäres Zentrum für Materialwissenschaften, Martin Luther University Halle-Wittenberg, 06099 Halle. Nanosized perpendicular organic spin-valves. United States. doi:10.1063/1.4914830.
Göckeritz, Robert, Homonnay, Nico, Müller, Alexander, Richter, Tim, Fuhrmann, Bodo, Schmidt, Georg, E-mail: georg.schmidt@physik.uni-halle.de, and Interdisziplinäres Zentrum für Materialwissenschaften, Martin Luther University Halle-Wittenberg, 06099 Halle. Mon . "Nanosized perpendicular organic spin-valves". United States. doi:10.1063/1.4914830.
@article{osti_22395715,
title = {Nanosized perpendicular organic spin-valves},
author = {Göckeritz, Robert and Homonnay, Nico and Müller, Alexander and Richter, Tim and Fuhrmann, Bodo and Schmidt, Georg, E-mail: georg.schmidt@physik.uni-halle.de and Interdisziplinäres Zentrum für Materialwissenschaften, Martin Luther University Halle-Wittenberg, 06099 Halle},
abstractNote = {A fabrication process for perpendicular organic spin-valve devices based on the organic semiconductor Alq3 has been developed which offers the possibility to achieve active device areas of less than 500 × 500 nm{sup 2} and is flexible in terms of material choice for the active layers. Characterization of the resulting devices shows a large magnetoresistance of sometimes more than 100%, however with equally large variation from device to device. Comparison with large area spin-valves indicates that the magnetoresistance of both large and small devices most likely originates from tunneling through pinholes and tunneling magnetoresistance.},
doi = {10.1063/1.4914830},
journal = {Applied Physics Letters},
number = 10,
volume = 106,
place = {United States},
year = {Mon Mar 09 00:00:00 EDT 2015},
month = {Mon Mar 09 00:00:00 EDT 2015}
}