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Title: Inherent point defects at the thermal higher-Miller index (211)Si/SiO{sub 2} interface

Abstract

Electron spin resonance (ESR) studies were carried out on the higher-Miller index (211)Si/SiO{sub 2} interface thermally grown in the temperature range T{sub ox} = 400–1066 °C to assess interface quality in terms of inherently incorporated point defects. This reveals the presence predominantly of two species of a P{sub b}-type interface defect (interfacial Si dangling bond), which, based on pertinent ESR parameters, is typified as P{sub b0}{sup (211)} variant, close to the P{sub b0} center observed in standard (100)Si/SiO{sub 2}—known as utmost detrimental interface trap. T{sub ox} ≳ 750 °C is required to minimize the P{sub b0}{sup (211)} defect density (∼4.2 × 10{sup 12 }cm{sup −2}; optimized interface). The data clearly reflect the non-elemental nature of the (211)Si face as an average of (100) and (111) surfaces. It is found that in oxidizing (211)Si at T{sub ox} ≳ 750 °C, the optimum Si/SiO{sub 2} interface quality is retained for the two constituent low-index (100) and (111) faces separately, indicating firm anticipating power for higher-index Si/SiO{sub 2} interfaces in general. It implies that, as a whole, the quality of a thermal higher-index Si/SiO{sub 2} interface can never surmount that of the low-index (100)Si/SiO{sub 2} structure.

Authors:
;  [1]
  1. Department of Physics and Astronomy, University of Leuven, 3001 Leuven (Belgium)
Publication Date:
OSTI Identifier:
22395609
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 105; Journal Issue: 26; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; DENSITY; ELECTRON SPIN RESONANCE; INTERFACES; POINT DEFECTS; SILICA; SILICON; SURFACES; TRAPS

Citation Formats

Iacovo, S., and Stesmans, A., E-mail: andre.stesmans@fys.kuleuven.be. Inherent point defects at the thermal higher-Miller index (211)Si/SiO{sub 2} interface. United States: N. p., 2014. Web. doi:10.1063/1.4904413.
Iacovo, S., & Stesmans, A., E-mail: andre.stesmans@fys.kuleuven.be. Inherent point defects at the thermal higher-Miller index (211)Si/SiO{sub 2} interface. United States. doi:10.1063/1.4904413.
Iacovo, S., and Stesmans, A., E-mail: andre.stesmans@fys.kuleuven.be. Mon . "Inherent point defects at the thermal higher-Miller index (211)Si/SiO{sub 2} interface". United States. doi:10.1063/1.4904413.
@article{osti_22395609,
title = {Inherent point defects at the thermal higher-Miller index (211)Si/SiO{sub 2} interface},
author = {Iacovo, S. and Stesmans, A., E-mail: andre.stesmans@fys.kuleuven.be},
abstractNote = {Electron spin resonance (ESR) studies were carried out on the higher-Miller index (211)Si/SiO{sub 2} interface thermally grown in the temperature range T{sub ox} = 400–1066 °C to assess interface quality in terms of inherently incorporated point defects. This reveals the presence predominantly of two species of a P{sub b}-type interface defect (interfacial Si dangling bond), which, based on pertinent ESR parameters, is typified as P{sub b0}{sup (211)} variant, close to the P{sub b0} center observed in standard (100)Si/SiO{sub 2}—known as utmost detrimental interface trap. T{sub ox} ≳ 750 °C is required to minimize the P{sub b0}{sup (211)} defect density (∼4.2 × 10{sup 12 }cm{sup −2}; optimized interface). The data clearly reflect the non-elemental nature of the (211)Si face as an average of (100) and (111) surfaces. It is found that in oxidizing (211)Si at T{sub ox} ≳ 750 °C, the optimum Si/SiO{sub 2} interface quality is retained for the two constituent low-index (100) and (111) faces separately, indicating firm anticipating power for higher-index Si/SiO{sub 2} interfaces in general. It implies that, as a whole, the quality of a thermal higher-index Si/SiO{sub 2} interface can never surmount that of the low-index (100)Si/SiO{sub 2} structure.},
doi = {10.1063/1.4904413},
journal = {Applied Physics Letters},
number = 26,
volume = 105,
place = {United States},
year = {Mon Dec 29 00:00:00 EST 2014},
month = {Mon Dec 29 00:00:00 EST 2014}
}