Determination of CdTe bulk carrier lifetime and interface recombination velocity of CdTe/MgCdTe double heterostructures grown by molecular beam epitaxy
- Center for Photonics Innovation, Arizona State University, Tempe, Arizona 85287 (United States)
The bulk Shockley-Read-Hall carrier lifetime of CdTe and interface recombination velocity at the CdTe/Mg{sub 0.24}Cd{sub 0.76}Te heterointerface are estimated to be around 0.5 μs and (4.7 ± 0.4) × 10{sup 2 }cm/s, respectively, using time-resolved photoluminescence (PL) measurements. Four CdTe/MgCdTe double heterostructures (DHs) with varying CdTe layer thicknesses were grown on nearly lattice-matched InSb (001) substrates using molecular beam epitaxy. The longest lifetime of 179 ns is observed in the DH with a 2 μm thick CdTe layer. It is also shown that the photon recycling effect has a strong influence on the bulk radiative lifetime, and the reabsorption process affects the measured PL spectrum shape and intensity.
- OSTI ID:
- 22395580
- Journal Information:
- Applied Physics Letters, Vol. 105, Issue 25; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
- Country of Publication:
- United States
- Language:
- English
Similar Records
Carrier lifetimes and interface recombination velocities in CdTe/Mg{sub x}Cd{sub 1−x}Te double heterostructures with different Mg compositions grown by molecular beam epitaxy
Growth, steady-state, and time-resolved photoluminescence study of CdTe/MgCdTe double heterostructures on InSb substrates using molecular beam epitaxy
Related Subjects
SUPERCONDUCTIVITY AND SUPERFLUIDITY
CADMIUM TELLURIDES
CARRIER LIFETIME
CHARGE CARRIERS
EMISSION SPECTRA
HALL EFFECT
HETEROJUNCTIONS
INDIUM ANTIMONIDES
INTERFACES
LAYERS
MAGNESIUM COMPOUNDS
MOLECULAR BEAM EPITAXY
PHOTOLUMINESCENCE
PHOTONS
RECOMBINATION
SUBSTRATES
TIME RESOLUTION