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Title: Determination of CdTe bulk carrier lifetime and interface recombination velocity of CdTe/MgCdTe double heterostructures grown by molecular beam epitaxy

Abstract

The bulk Shockley-Read-Hall carrier lifetime of CdTe and interface recombination velocity at the CdTe/Mg{sub 0.24}Cd{sub 0.76}Te heterointerface are estimated to be around 0.5 μs and (4.7 ± 0.4) × 10{sup 2 }cm/s, respectively, using time-resolved photoluminescence (PL) measurements. Four CdTe/MgCdTe double heterostructures (DHs) with varying CdTe layer thicknesses were grown on nearly lattice-matched InSb (001) substrates using molecular beam epitaxy. The longest lifetime of 179 ns is observed in the DH with a 2 μm thick CdTe layer. It is also shown that the photon recycling effect has a strong influence on the bulk radiative lifetime, and the reabsorption process affects the measured PL spectrum shape and intensity.

Authors:
;  [1]; ; ; ;  [1]
  1. Center for Photonics Innovation, Arizona State University, Tempe, Arizona 85287 (United States)
Publication Date:
OSTI Identifier:
22395580
Resource Type:
Journal Article
Journal Name:
Applied Physics Letters
Additional Journal Information:
Journal Volume: 105; Journal Issue: 25; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); Journal ID: ISSN 0003-6951
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; CADMIUM TELLURIDES; CARRIER LIFETIME; CHARGE CARRIERS; EMISSION SPECTRA; HALL EFFECT; HETEROJUNCTIONS; INDIUM ANTIMONIDES; INTERFACES; LAYERS; MAGNESIUM COMPOUNDS; MOLECULAR BEAM EPITAXY; PHOTOLUMINESCENCE; PHOTONS; RECOMBINATION; SUBSTRATES; TIME RESOLUTION

Citation Formats

Zhao, Xin-Hao, Campbell, Calli M., School for Engineering of Matter, Transport and Energy, Arizona State University, Tempe, Arizona 85287, DiNezza, Michael J., Liu, Shi, Zhao, Yuan, Zhang, Yong-Hang, and School of Electrical, Computer and Energy Engineering, Arizona State University, Tempe, Arizona 85287. Determination of CdTe bulk carrier lifetime and interface recombination velocity of CdTe/MgCdTe double heterostructures grown by molecular beam epitaxy. United States: N. p., 2014. Web. doi:10.1063/1.4904993.
Zhao, Xin-Hao, Campbell, Calli M., School for Engineering of Matter, Transport and Energy, Arizona State University, Tempe, Arizona 85287, DiNezza, Michael J., Liu, Shi, Zhao, Yuan, Zhang, Yong-Hang, & School of Electrical, Computer and Energy Engineering, Arizona State University, Tempe, Arizona 85287. Determination of CdTe bulk carrier lifetime and interface recombination velocity of CdTe/MgCdTe double heterostructures grown by molecular beam epitaxy. United States. doi:10.1063/1.4904993.
Zhao, Xin-Hao, Campbell, Calli M., School for Engineering of Matter, Transport and Energy, Arizona State University, Tempe, Arizona 85287, DiNezza, Michael J., Liu, Shi, Zhao, Yuan, Zhang, Yong-Hang, and School of Electrical, Computer and Energy Engineering, Arizona State University, Tempe, Arizona 85287. Mon . "Determination of CdTe bulk carrier lifetime and interface recombination velocity of CdTe/MgCdTe double heterostructures grown by molecular beam epitaxy". United States. doi:10.1063/1.4904993.
@article{osti_22395580,
title = {Determination of CdTe bulk carrier lifetime and interface recombination velocity of CdTe/MgCdTe double heterostructures grown by molecular beam epitaxy},
author = {Zhao, Xin-Hao and Campbell, Calli M. and School for Engineering of Matter, Transport and Energy, Arizona State University, Tempe, Arizona 85287 and DiNezza, Michael J. and Liu, Shi and Zhao, Yuan and Zhang, Yong-Hang and School of Electrical, Computer and Energy Engineering, Arizona State University, Tempe, Arizona 85287},
abstractNote = {The bulk Shockley-Read-Hall carrier lifetime of CdTe and interface recombination velocity at the CdTe/Mg{sub 0.24}Cd{sub 0.76}Te heterointerface are estimated to be around 0.5 μs and (4.7 ± 0.4) × 10{sup 2 }cm/s, respectively, using time-resolved photoluminescence (PL) measurements. Four CdTe/MgCdTe double heterostructures (DHs) with varying CdTe layer thicknesses were grown on nearly lattice-matched InSb (001) substrates using molecular beam epitaxy. The longest lifetime of 179 ns is observed in the DH with a 2 μm thick CdTe layer. It is also shown that the photon recycling effect has a strong influence on the bulk radiative lifetime, and the reabsorption process affects the measured PL spectrum shape and intensity.},
doi = {10.1063/1.4904993},
journal = {Applied Physics Letters},
issn = {0003-6951},
number = 25,
volume = 105,
place = {United States},
year = {2014},
month = {12}
}