Cathodic cage plasma deposition of TiN and TiO{sub 2} thin films on silicon substrates
- Department of Mechanics, Federal Institute of Education, Science, and Technology of Piaui, Praça da Liberdade, 1597, CEP 64000-040 Teresina, Piaui, Brazil and Department of Mechanical Engineering, Federal University of Piaui, Campus Min. Petronio Portela, Ininga, CEP 64049-550 Teresina, Piaui (Brazil)
- Department of Materials Engineering, Federal University of Sao Carlos, Via Washington Luis km 235, CEP 13565-905 Sao Carlos, Sao Paulo (Brazil)
- Department of Physics, Federal University of Piaui, Campus Min. Petronio Portela, Ininga, CEP 64049-550 Teresina, Piaui (Brazil)
- Department of Exact and Natural Sciences, Federal Rural University of Semi Arido, Avenida Francisco Mota, 572, CEP 59625-900 Mossoro, Rio Grande do Norte (Brazil)
- Department of Chemistry and Materials Engineering, Faculty of Chemistry, Materials and Bioengineering, Kansai University, 3-3-35 Yamate-cho, Suita, Osaka 564-8680 (Japan)
Cathodic cage plasma deposition (CCPD) was used for growing titanium nitride (TiN) and titanium dioxide (TiO{sub 2}) thin films on silicon substrates. The main advantages of the CCPD technique are the uniformity, tridimensionality, and high rate of the film deposition that occurs at higher pressures, lower temperatures, and lower treatment times than those used in conventional nitriding treatments. In this work, the influence of the temperature and gas atmosphere upon the characteristics of the deposited films was investigated. The TiN and TiO{sub 2} thin films were characterized by x-ray diffraction, scanning electron microscopy, and Raman spectroscopy to analyze their chemical, structural, and morphological characteristics, and the combination of these results indicates that the low-cost CCPD technique can be used to produce even and highly crystalline TiN and TiO{sub 2} films.
- OSTI ID:
- 22392197
- Journal Information:
- Journal of Vacuum Science and Technology. A, Vacuum, Surfaces and Films, Vol. 33, Issue 4; Other Information: (c) 2015 American Vacuum Society; Country of input: International Atomic Energy Agency (IAEA); ISSN 0734-2101
- Country of Publication:
- United States
- Language:
- English
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