Effects of chemical intermixing on electrical and thermal contact conductances at metallized bismuth and antimony telluride interfaces
- Department of Materials Science and Engineering, Rensselaer Polytechnic Institute, Troy, New York 12180 (United States)
- Intel Corporation, Assembly Test and Technology Development, Chandler, Arizona 85226 (United States)
- Department of Physics, Applied Physics and Astronomy, Rensselaer Polytechnic Institute, Troy, New York 12180 (United States)
- Department of Mechanical Aerospace and Nuclear Engineering, Rensselaer Polytechnic Institute, Troy, New York 12180 (United States)
Tailoring electrical and thermal contact conductivities (Σ{sub c} and Γ{sub c}) across metallized pnictogen chalcogenide interfaces is key for realizing efficient thermoelectric devices. The authors report that Cu, Ni, Ti, and Ta diffusion and interfacial telluride formation with n-Bi{sub 2}Te{sub 3} and p-Sb{sub 2}Te{sub 3} influence both Σ{sub c} and Γ{sub c}. Cu metallization yields the highest Γ{sub c} and the lowest Σ{sub c}, correlating with maximal metal diffusion and copper telluride formation. Ni diffuses less and yields the highest Σ{sub c} with Sb{sub 2}Te{sub 3} due to p-type nickel telluride formation, which diminishes Σ{sub c} improvement with n-Bi{sub 2}Te{sub 3} interfaces. Ta and Ti contacts yield the lowest properties similar to that in Ni-metallized structures. These correlations between interfacial diffusion and phase formation on electronic and thermal transport properties will be important for devising suitable metallization for thermoelectric devices.
- OSTI ID:
- 22392128
- Journal Information:
- Journal of Vacuum Science and Technology. A, Vacuum, Surfaces and Films, Vol. 33, Issue 2; Other Information: (c) 2015 American Vacuum Society; Country of input: International Atomic Energy Agency (IAEA); ISSN 0734-2101
- Country of Publication:
- United States
- Language:
- English
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