Suppression of self-heating effect in AlGaN/GaN high electron mobility transistors by substrate-transfer technology using h-BN

Journal Article · Mon Nov 10 00:00:00 EST 2014 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.4901938· OSTI ID:22391978

Hiroki, Masanobu; Kumakura, Kazuhide; Kobayashi, Yasuyuki; Akasaka, Tetsuya; Makimoto, Toshiki; Yamamoto, Hideki ^[1]

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1. NTT Basic Research Laboratories, NTT Corporation 3-1 Morinosato Wakamiya, Atsugi-shi 243-0198 (Japan)

We fabricated AlGaN/GaN high electron mobility transistors (HEMTs) on h-BN/sapphire substrates and transferred them from the host substrates to copper plates using h-BN as a release layer. In current–voltage characteristics, the saturation drain current decreased by about 30% under a high-bias condition before release by self-heating effect. In contrast, after transfer, the current decrement was as small as 8% owing to improved heat dissipation: the device temperature increased to 50 °C in the as-prepared HEMT, but only by several degrees in the transferred HEMT. An effective way to improve AlGaN/GaN HEMT performance by a suppression of self-heating effect has been demonstrated.

• OSTI ID: 22391978
• Journal Information: Applied Physics Letters, Vol. 105, Issue 19; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
71 CLASSICAL AND QUANTUM MECHANICS
GENERAL PHYSICS
ALUMINIUM COMPOUNDS
COPPER
ELECTRIC CONDUCTIVITY
ELECTRON MOBILITY
ENERGY LOSSES
GALLIUM NITRIDES
HEATING
LAYERS
SAPPHIRE
SUBSTRATES
TRANSISTORS