High quality boron carbon nitride/ZnO-nanorods p-n heterojunctions based on magnetron sputtered boron carbon nitride films

Journal Article · Sun Nov 09 23:00:00 EST 2014 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.4901273· OSTI ID:22391950

Qian, J. C. ^[1]; Wang, B. Q. ^[2]; Jelenković, E. V. ^[3]; Bello, I. ^[4]; Klemberg-Sapieha, J. E.; Martinu, L. ^[5]

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1. Department of Physics and Materials Science and Center of Super-Diamond and Advanced Films, City University of Hong Kong, HKSAR (China)
2. Department of Mechanical and Materials Engineering and Department of Chemistry, University of Western Ontario, London, Ontario N6A 5B8 (Canada)
3. State Key Laboratory in Ultra-Precision Machining Technology, Department of Industrial and Systems Engineering, The Hong Kong Polytechnic University, HKSAR (China)
4. Vacuum Electronics Ltd., London, Ontario N6K 5A2 (Canada)
5. Department of Engineering Physics, Polytechnique Montréal, Montreal, Quebec H3A 3A7 (Canada)

Boron carbon nitride (BCN) films were synthesized on Si (100) and fused silica substrates by radio-frequency magnetron sputtering from a B{sub 4}C target in an Ar/N{sub 2} gas mixture. The BCN films were amorphous, and they exhibited an optical band gap of ∼1.0 eV and p-type conductivity. The BCN films were over-coated with ZnO nanorod arrays using hydrothermal synthesis to form BCN/ZnO-nanorods p-n heterojunctions, exhibiting a rectification ratio of 1500 at bias voltages of ±5 V.

• OSTI ID: 22391950
• Journal Information: Applied Physics Letters, Journal Name: Applied Physics Letters Journal Issue: 19 Vol. 105; ISSN APPLAB; ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
BORON
BORON CARBIDES
CARBON NITRIDES
FILMS
HYDROTHERMAL SYNTHESIS
MAGNETRONS
NANOSTRUCTURES
P-N JUNCTIONS
SILICA
SPUTTERING
SUBSTRATES
ZINC OXIDES