Carrier transport in graphite/Si{sub 3}N{sub 4}-nanobelt/PtIr Schottky barrier diodes
- Research Institute of Surface Engineering, Taiyuan University of Technology, Taiyuan City 030024 (China)
- Institute of Materials, Ningbo University of Technology, Ningbo City 315016 (China)
Understanding the roles of contacts and interfaces between metals and semiconductors is critically important for exploring nanostructure-based nanodevices. The present study shed some light on the dominated mechanism of size-dependent carrier transfer in the Schottky barrier diodes configured by the Pt-Ir/Si{sub 3}N{sub 4}-nanobelt/graphite (metal-semiconductor-metal (MSM)) sandwiched structure via a conductive atomic force microscopy using nanobelts with various thicknesses. The observed I-V behaviors suggested that the charge transports under the low and high biases were dominated by the reverse-biased Schottky barrier and space-charge-limited current (SCLC), respectively. The intermediate region between the low and high biases presented the transition between the Ohmic and SCLC behaviors, in which the ≡Si and =N dangling bonds acted as the defects within the Si{sub 3}N{sub 4} nanobelt surface are predominant in the charge transfer.
- OSTI ID:
- 22391936
- Journal Information:
- Applied Physics Letters, Vol. 105, Issue 19; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
SUPERCONDUCTIVITY AND SUPERFLUIDITY
71 CLASSICAL AND QUANTUM MECHANICS
GENERAL PHYSICS
ATOMIC FORCE MICROSCOPY
CHARGE TRANSPORT
CRYSTAL DEFECTS
ELECTRIC CONDUCTIVITY
GRAPHITE
IRIDIUM
NANOSTRUCTURES
PLATINUM
SCHOTTKY BARRIER DIODES
SEMICONDUCTOR MATERIALS
SILICON NITRIDES
SPACE CHARGE
SURFACES