Synthesis and characterization of ZnO nanostructured film for optoelectronic applications

Journal Article · Fri May 15 00:00:00 EDT 2015 · AIP Conference Proceedings

DOI:https://doi.org/10.1063/1.4915401· OSTI ID:22391722

Kumar, Vijay ^[1]; Singh, Harpreetpal ^[2]; Kumar, Sanjeev ^[3]

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1. Punjab Institute of Technology, Mohali-140501 (India)
2. SUSCET, Tangori/Punjab Technical University, Jalandhar (India)
3. Department of Applied Science, PEC University of Technology, Chandigarh-160012 (India)

ZnO nanostructured film is synthesized by solution combustion technique. X-ray diffraction (XRD) studies show that preferred orientation is along (101) confirming the hexagonal wurtzite phase and no secondary phase is observed. The rietveld refinement of the XRD data was used to calculate different lattice parameters. I-V characterization of ZnO film shows non linear behavior. These ZnO films are photosensitive, may be due to defect states. This property of these films can be utilized in optoelectronic applications.

• OSTI ID: 22391722
• Journal Information: AIP Conference Proceedings, Vol. 1661, Issue 1; Conference: ICCMP 2014: International Conference on Condensed Matter Physics 2014, Shimla (India), 4-6 Nov 2014; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0094-243X
• Country of Publication: United States
• Language: English

Related Subjects

77 NANOSCIENCE AND NANOTECHNOLOGY
71 CLASSICAL AND QUANTUM MECHANICS
GENERAL PHYSICS
CUBIC LATTICES
ELECTRIC CONDUCTIVITY
GRAIN ORIENTATION
NANOSTRUCTURES
NONLINEAR PROBLEMS
PHOTOSENSITIVITY
SYNTHESIS
THIN FILMS
X-RAY DIFFRACTION
ZINC OXIDES