Nanostructured and wide bandgap CdS:O thin films grown by reactive RF sputtering

Journal Article · Fri May 15 00:00:00 EDT 2015 · AIP Conference Proceedings

DOI:https://doi.org/10.1063/1.4915766· OSTI ID:22391671

Islam, M. A.; Rahman, K. S.; Haque, F.; Rashid, M. J.; Akhtaruzzaman, M.; Sopian, K.; Sulaiman, Y. ^[1]; Amin, N. ^[1]

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1. Solar Energy Research Institute (SERI), National University of Malaysia, 43600 Bangi (Malaysia)

In this study, CdS:O thin films were prepared from a 99.999% CdS target by reactive sputtering in a Ar:O{sub 2} (99:1) ambient with different RF power at room temperature. The deposited films were studied by means of XRD, SEM, EDX, Hall Effect and UV-Vis spectrometry. The incorporations of O{sub 2} into the films were observed to increase with the decrease of deposition power. The cryatallinity of the films were reduced, whereas the band gaps of the films were increased by the increase of O{sub 2} content on the films. The films were found in nano-structured grains with a compact surface. It has been seen that the highest carrier density is observed in the film with O{sub 2} at.% 21.10, while the values decreased with the further increase or decrease of O{sub 2} content on the films; indicating that specific amount of donor like O{sub 2} atoms substitute to the S atoms can improve the carrier density of the CdS:O thin film.

• OSTI ID: 22391671
• Journal Information: AIP Conference Proceedings, Vol. 1660, Issue 1; Conference: ICoMEIA 2014: International Conference on Mathematics, Engineering and Industrial Applications 2014, Penang (Malaysia), 28-30 May 2014; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0094-243X
• Country of Publication: United States
• Language: English

Related Subjects

77 NANOSCIENCE AND NANOTECHNOLOGY
71 CLASSICAL AND QUANTUM MECHANICS
GENERAL PHYSICS
ABSORPTION SPECTROSCOPY
CADMIUM SULFIDES
CARRIER DENSITY
DEPOSITION
ELECTRONIC STRUCTURE
EMISSION SPECTROSCOPY
ENERGY GAP
HALL EFFECT
NANOSTRUCTURES
SCANNING ELECTRON MICROSCOPY
SPUTTERING
SURFACES
TEMPERATURE RANGE 0273-0400 K
THIN FILMS
X-RAY DIFFRACTION