Temperature dependent photoluminescence and micromapping of multiple stacks InAs quantum dots

Journal Article · Fri Feb 27 00:00:00 EST 2015 · AIP Conference Proceedings

DOI:https://doi.org/10.1063/1.4913536· OSTI ID:22391190

Xu, Ming; Jaffré, Alexandre; Alvarez, José; Kleider, Jean-Paul; Boutchich, Mohamed ^[1]; Jittrong, Apichat; Chokamnuai, Thitipong; Panyakeow, Somsak; Kanjanachuchai, Songphol ^[2]

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1. LGEP, CNRS UMR8507, SUPELEC, Univ Paris-Sud, Sorbonne Universités - UPMC, Univ Paris 06, 11 rue Joliot-Curie, Plateau de Moulon, 91192 Gif-sur-Yvette Cedex (France)
2. Semiconductor Device Research Laboratory (Nanotec Center of Excellence), Department of Electrical Engineering, Faculty of Engineering, Chulalongkorn University, Bangkok 10330 (Thailand)

We utilized temperature dependent photoluminescence (PL) techniques to investigate 1, 3 and 5 stack InGaAs quantum dots (QDs) grown on cross-hatch patterns. PL mapping can well reproduce the QDs distribution as AFM and position dependency of QD growth. It is possible to observe crystallographic dependent PL. The temperature dependent spectra exhibit the QDs energy distribution which reflects the size and shape. The inter-dot carrier coupling effect is observed and translated as a red shift of 120mV on the [1–10] direction peak is observed at 30K on 1 stack with regards to 3 stacks samples, which is assigned to lateral coupling.

• OSTI ID: 22391190
• Journal Information: AIP Conference Proceedings, Vol. 1649, Issue 1; Conference: IRAGO Conference 2014, Tsukuba-city, Ibaraki (Japan), 6-7 Nov 2014; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0094-243X
• Country of Publication: United States
• Language: English

Related Subjects

71 CLASSICAL AND QUANTUM MECHANICS
GENERAL PHYSICS
77 NANOSCIENCE AND NANOTECHNOLOGY
ATOMIC FORCE MICROSCOPY
BACTERIA
COUPLING
CRYSTALLOGRAPHY
ENERGY SPECTRA
GALLIUM ARSENIDES
INDIUM ARSENIDES
PHOTOLUMINESCENCE
QUANTUM DOTS
RED SHIFT
TEMPERATURE DEPENDENCE