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Title: Effect of Ga-doping on the properties of ZnO nanowire

Abstract

Arrays of single-crystal zinc oxide (ZnO) nanowires have been synthesized on silicon substrates by vapor-liquid-solid growth techniques. The effect of growth conditions including substrate temperature and Ar gas flow rate on growth properties of ZnO nanowire arrays were studied. Structural and optical characterization was performed using scanning electron microscopy (SEM) and photoluminescence (PL) spectroscopy. SEM images of the ZnO nanowire arrays grown at various Ar gas flow rates indicated that the alignment and structural features of ZnO nanowires were affected by the gas flow rate. The PL of the ZnO nanowire arrays exhibited strong ultraviolet (UV) emission at 380 nm and green emission around 510 nm. Moreover, the green emission reduced in Ga-doped sample.

Authors:
; ;  [1]
  1. Department of Electrical and Electronic Information Engineering, Toyohashi University of Technology 1-1 Hibarigaoka, Tempaku-cho, Toyohashi, Aichi 441-8580 (Japan)
Publication Date:
OSTI Identifier:
22391188
Resource Type:
Journal Article
Resource Relation:
Journal Name: AIP Conference Proceedings; Journal Volume: 1649; Journal Issue: 1; Conference: IRAGO Conference 2014, Tsukuba-city, Ibaraki (Japan), 6-7 Nov 2014; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
77 NANOSCIENCE AND NANOTECHNOLOGY; 71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; DOPED MATERIALS; EMISSION SPECTROSCOPY; GALLIUM COMPOUNDS; GAS FLOW; LIQUIDS; MONOCRYSTALS; NANOWIRES; PHOTOLUMINESCENCE; SCANNING ELECTRON MICROSCOPY; SILICON; SOLIDS; SUBSTRATES; ULTRAVIOLET RADIATION; VAPORS; ZINC OXIDES

Citation Formats

Ishiyama, Takeshi, E-mail: ishiyama@ee.tut.ac.jp, Nakane, Takaya, E-mail: ishiyama@ee.tut.ac.jp, and Fujii, Tsutomu, E-mail: ishiyama@ee.tut.ac.jp. Effect of Ga-doping on the properties of ZnO nanowire. United States: N. p., 2015. Web. doi:10.1063/1.4913538.
Ishiyama, Takeshi, E-mail: ishiyama@ee.tut.ac.jp, Nakane, Takaya, E-mail: ishiyama@ee.tut.ac.jp, & Fujii, Tsutomu, E-mail: ishiyama@ee.tut.ac.jp. Effect of Ga-doping on the properties of ZnO nanowire. United States. doi:10.1063/1.4913538.
Ishiyama, Takeshi, E-mail: ishiyama@ee.tut.ac.jp, Nakane, Takaya, E-mail: ishiyama@ee.tut.ac.jp, and Fujii, Tsutomu, E-mail: ishiyama@ee.tut.ac.jp. Fri . "Effect of Ga-doping on the properties of ZnO nanowire". United States. doi:10.1063/1.4913538.
@article{osti_22391188,
title = {Effect of Ga-doping on the properties of ZnO nanowire},
author = {Ishiyama, Takeshi, E-mail: ishiyama@ee.tut.ac.jp and Nakane, Takaya, E-mail: ishiyama@ee.tut.ac.jp and Fujii, Tsutomu, E-mail: ishiyama@ee.tut.ac.jp},
abstractNote = {Arrays of single-crystal zinc oxide (ZnO) nanowires have been synthesized on silicon substrates by vapor-liquid-solid growth techniques. The effect of growth conditions including substrate temperature and Ar gas flow rate on growth properties of ZnO nanowire arrays were studied. Structural and optical characterization was performed using scanning electron microscopy (SEM) and photoluminescence (PL) spectroscopy. SEM images of the ZnO nanowire arrays grown at various Ar gas flow rates indicated that the alignment and structural features of ZnO nanowires were affected by the gas flow rate. The PL of the ZnO nanowire arrays exhibited strong ultraviolet (UV) emission at 380 nm and green emission around 510 nm. Moreover, the green emission reduced in Ga-doped sample.},
doi = {10.1063/1.4913538},
journal = {AIP Conference Proceedings},
number = 1,
volume = 1649,
place = {United States},
year = {Fri Feb 27 00:00:00 EST 2015},
month = {Fri Feb 27 00:00:00 EST 2015}
}