Effect of Ga-doping on the properties of ZnO nanowire
- Department of Electrical and Electronic Information Engineering, Toyohashi University of Technology 1-1 Hibarigaoka, Tempaku-cho, Toyohashi, Aichi 441-8580 (Japan)
Arrays of single-crystal zinc oxide (ZnO) nanowires have been synthesized on silicon substrates by vapor-liquid-solid growth techniques. The effect of growth conditions including substrate temperature and Ar gas flow rate on growth properties of ZnO nanowire arrays were studied. Structural and optical characterization was performed using scanning electron microscopy (SEM) and photoluminescence (PL) spectroscopy. SEM images of the ZnO nanowire arrays grown at various Ar gas flow rates indicated that the alignment and structural features of ZnO nanowires were affected by the gas flow rate. The PL of the ZnO nanowire arrays exhibited strong ultraviolet (UV) emission at 380 nm and green emission around 510 nm. Moreover, the green emission reduced in Ga-doped sample.
- OSTI ID:
- 22391188
- Journal Information:
- AIP Conference Proceedings, Vol. 1649, Issue 1; Conference: IRAGO Conference 2014, Tsukuba-city, Ibaraki (Japan), 6-7 Nov 2014; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0094-243X
- Country of Publication:
- United States
- Language:
- English
Similar Records
Structural, optical and gas sensing properties of vertically well-aligned ZnO nanowires grown on graphene/Si substrate by thermal evaporation method
Impact of surface morphology of Si substrate on performance of Si/ZnO heterojunction devices grown by atomic layer deposition technique