Correlation of the ionisation response at selected points of IC sensitive regions with SEE sensitivity parameters under pulsed laser irradiation

Journal Article · Wed Dec 31 00:00:00 EST 2014 · Quantum Electronics (Woodbury, N.Y.)

DOI:https://doi.org/10.1070/QE2014V044N12ABEH015519· OSTI ID:22373330

Gordienko, A V; Mavritskii, O B; Egorov, A N; Pechenkin, A A; Savchenkov, D V ^[1]

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1. National Research Nuclear University ''MEPhI'' (Russian Federation)

The statistics of the ionisation response amplitude measured at selected points and their surroundings within sensitive regions of integrated circuits (ICs) under focused femtosecond laser irradiation is obtained for samples chosen from large batches of two types of ICs. A correlation between these data and the results of full-chip scanning is found for each type. The criteria for express validation of IC single-event effect (SEE) hardness based on ionisation response measurements at selected points are discussed. (laser applications and other topics in quantum electronics)

• OSTI ID: 22373330
• Journal Information: Quantum Electronics (Woodbury, N.Y.), Vol. 44, Issue 12; Other Information: Country of input: International Atomic Energy Agency (IAEA); ISSN 1063-7818
• Country of Publication: United States
• Language: English

Related Subjects

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY
INTEGRATED CIRCUITS
LASER RADIATION
LASERS
PULSES
QUANTUM ELECTRONICS
SENSITIVITY
STATISTICS