Bonding mechanism of a yttrium iron garnet film on Si without the use of an intermediate layer

Journal Article · Mon Oct 06 00:00:00 EDT 2014 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.4896978· OSTI ID:22351127

Pantzas, Konstantinos ^[1]; Patriarche, Gilles; Talneau, Anne ^[1]; Youssef, Jamal Ben ^[2]

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1. CNRS-LPN, Route de Nozay, F-91460 Marcoussis (France)
2. Laboratoire de Magnetisme de Bretagne, 6 avenue Le Gorgeu, 29238 Brest Cedex 3 (France)

Direct bonding of yttrium iron garnet (YIG) on silicon without the use of an intermediate bonding layer is demonstrated and characterized using scanning transmission electron microscopy and energy-dispersive x-ray spectroscopy. During the bonding experiment, the garnet is reduced in the presence of oxide-free silicon. As a result, a 5 nm thick SiO{sub 2}/amorphous-YIG bilayer is formed and welds the garnet to silicon.

• OSTI ID: 22351127
• Journal Information: Applied Physics Letters, Vol. 105, Issue 14; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
AMORPHOUS STATE
FERRITE GARNETS
FILMS
GARNETS
IRON OXIDES
LAYERS
SILICON
SILICON OXIDES
TRANSMISSION ELECTRON MICROSCOPY
WELDED JOINTS
X-RAY SPECTROSCOPY
YTTRIUM COMPOUNDS