Graphene induced remote surface scattering in graphene/AlGaN/GaN heterostructures
- Department of Physics, Beijing Jiaotong University, Beijing 100044 (China)
The mobilities of single-layer graphene combined with AlGaN/GaN heterostructures on two-dimensional electron gases in graphene/AlGaN/GaN double heterojunction are calculated. The impact of electron density in single-layer graphene is also studied. Remote surface roughness (RSR) and remote interfacial charge (RIC) scatterings are introduced into this heterostructure. The mobilities limited by RSR and RIC are an order of magnitude higher than that of interface roughness and misfit dislocation. This study contributes to designing structures for generation of higher electron mobility in graphene/AlGaN/GaN double heterojunction.
- OSTI ID:
- 22350952
- Journal Information:
- Applied Physics Letters, Journal Name: Applied Physics Letters Journal Issue: 16 Vol. 105; ISSN APPLAB; ISSN 0003-6951
- Country of Publication:
- United States
- Language:
- English
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