Structural and emission properties of InGaAs/GaAs quantum dots emitting at 1.3 μm
- Institute of Theoretical Physics, University of Bremen, P.O. Box 330440, 28334 Bremen (Germany)
- Institut für Halbleiteroptik und Funktionelle Grenzflächen, Universität Stuttgart, Allmandring 3, 70569 Stuttgart (Germany)
- Institute of Solid State Physics, University of Bremen, P.O. Box 330440, 28334 Bremen (Germany)
A combined experimental and theoretical study of InGaAs/GaAs quantum dots (QDs) emitting at 1.3 μm under the influence of a strain-reducing InGaAs quantum well is presented. We demonstrate a red shift of 20–40 nm observed in photoluminescence spectra due to the quantum well. The InGaAs/GaAs QDs grown by metal organic vapor phase epitaxy show a bimodal height distribution (1 nm and 5 nm) and indium concentrations up to 90%. The emission properties are explained with combined tight-binding and configuration-interaction calculations of the emission wavelengths in conjunction with high-resolution scanning transmission electron microscopy investigations of QD geometry and indium concentrations in the QDs, which directly enter the calculations. QD geometries and concentration gradients representative for the ensemble are identified.
- OSTI ID:
- 22350896
- Journal Information:
- Applied Physics Letters, Vol. 105, Issue 15; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
SUPERCONDUCTIVITY AND SUPERFLUIDITY
CONFIGURATION INTERACTION
DISTRIBUTION
GALLIUM ARSENIDES
INDIUM ARSENIDES
INDIUM COMPOUNDS
ORGANOMETALLIC COMPOUNDS
PHOTOLUMINESCENCE
QUANTUM DOTS
QUANTUM WELLS
RED SHIFT
RESOLUTION
SPECTRA
STRAINS
TRANSMISSION ELECTRON MICROSCOPY
VAPOR PHASE EPITAXY
WAVELENGTHS