Characteristics of Sn segregation in Ge/GeSn heterostructures

Journal Article · Mon Oct 13 04:00:00 EDT 2014 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.4898583· OSTI ID:22350892

Li, H.; Chang, C.; Chen, T. P.; Shi, Z. W.; Chen, H. ^[1]

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1. Institute of Physics, Chinese Academy of Sciences, Beijing 100190 (China)

We report an investigation of Sn segregation in Ge/GeSn heterostructures occurred during the growth by molecular beam epitaxy. The measured Sn profile in the Ge layer shows that: (a) the Sn concentration decreases rapidly near the Ge/GeSn interface, and (b) when moving away from the interface, the Sn concentration reduced with a much slower rate. The 1/e decay lengths of the present system are much longer than those of the conventional group IV system of Ge segregation in the Si overlayer because of the smaller kinetic potential as modeled by a self-limited two-state exchange scheme. The demonstration of the Sn segregation shows the material characteristics of the heterostructure, which are needed for the investigation of its optical properties.

• OSTI ID: 22350892
• Journal Information: Applied Physics Letters, Journal Name: Applied Physics Letters Journal Issue: 15 Vol. 105; ISSN APPLAB; ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
CONCENTRATION RATIO
CRYSTAL GROWTH
GERMANIUM
GERMANIUM COMPOUNDS
INTERFACES
LAYERS
MOLECULAR BEAM EPITAXY
OPTICAL PROPERTIES
SEGREGATION
TIN COMPOUNDS