The shift of optical band gap in W-doped ZnO with oxygen pressure and doping level

Journal Article · Sun Jun 01 04:00:00 EDT 2014 · Materials Research Bulletin

DOI:https://doi.org/10.1016/J.MATERRESBULL.2014.03.005· OSTI ID:22348660

Chu, J. ^[1]; Peng, X. Y.; Dasari, K.; Palai, R. ^[1]

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1. Department of Physics, University of Puerto Rico, San Juan, PR 00936-8377 (Puerto Rico)

Highlights: • CVD–PLD co-deposition technique was used. • Better crystalline of the ZnO samples causes the redshift of the optical band gap. • Higher W concentration induces blueshift of the optical band gap. - Abstract: Tungsten-doped (W-doped) zinc oxide (ZnO) nanostructures were synthesized on quartz substrates by pulsed laser and hot filament chemical vapor co-deposition technique under different oxygen pressures and doping levels. We studied in detail the morphological, structural and optical properties of W-doped ZnO by SEM, XPS, Raman scattering, and optical transmission spectra. A close correlation among the oxygen pressure, morphology, W concentrations and the variation of band gaps were investigated. XPS and Raman measurements show that the sample grown under the oxygen pressure of 2.7 Pa has the maximum tungsten concentration and best crystalline structure, which induces the redshift of the optical band gap. The effect of W concentration on the change of morphology and shift of optical band gap was also studied for the samples grown under the fixed oxygen pressure of 2.7 Pa.

• OSTI ID: 22348660
• Journal Information: Materials Research Bulletin, Journal Name: Materials Research Bulletin Vol. 54; ISSN MRBUAC; ISSN 0025-5408
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
CHEMICAL VAPOR DEPOSITION
DOPED MATERIALS
ENERGY BEAM DEPOSITION
LASER RADIATION
NANOSTRUCTURES
OPTICAL PROPERTIES
OXYGEN
PULSES
RAMAN EFFECT
RAMAN SPECTROSCOPY
SCANNING ELECTRON MICROSCOPY
SPECTRA
SUBSTRATES
TUNGSTEN
X-RAY PHOTOELECTRON SPECTROSCOPY
ZINC OXIDES