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Photoluminescence properties of AlN-doped BaMgAl{sub 10}O{sub 17}:Eu{sup 2+} phosphors

Journal Article · · Materials Research Bulletin
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  1. Department of Applied Physics, Hunan Agricultural University, Changsha 410128 (China)
  2. Department of Graduate Studies, Hunan Agricultural University, Changsha 410128 (China)
  3. Chemistry Department, Northwestern University, Evanston 60208 (United States)
Highlights: ► Ideal hexagonal shape particle size in 5 μm and 2.5–3 μm in thickness are obtained. ► The growth mechanism is studied by a computer simulation. ► The influence of introduced AlN on the sites of Eu{sup 2+} and photoluminescence properties was investigated. - Abstract: The AlN-doped BaMgAl{sub 10}O{sub 17}:Eu{sup 2+} phosphors were synthesized by conventional solid-state reaction. Powder X-ray diffraction (XRD), scanning electron microscope (SEM) and photoluminescence spectrum (PL) were used for characterization. The growth mechanism was carried out by computer simulation with CASTEP application, and revealed that an ideal hexagonal shape, particle size in 5 μm and 2.5–3 μm in thickness, could be obtained by AlN doping. Additionally, due to the low electronegativity of N{sup 3−}, the AlN-doped sample showed 35% increase in PL intensity and improvement of thermal stability. These fine particle size and better photoluminescence properties are expected to be applicable to industrial production of BaMgAl{sub 10}O{sub 17}:Eu{sup 2+} phosphors.
OSTI ID:
22341677
Journal Information:
Materials Research Bulletin, Journal Name: Materials Research Bulletin Journal Issue: 6 Vol. 48; ISSN MRBUAC; ISSN 0025-5408
Country of Publication:
United States
Language:
English