Effects of Be acceptors on the spin polarization of carriers in p-i-n resonant tunneling diodes
- Departamento de Física, Universidade Federal de São Carlos (UFSCAR) 13560-905, São Carlos, SP (Brazil)
- Departamento de Engenharia Elétrica, Universidade Federal de São Carlos 13560-905, São Carlos, SP (Brazil)
- School of Physics and Astronomy, Nottingham Nanotechnology and Nanoscience Centre, University of Nottingham, Nottingham NG7 2RD (United Kingdom)
In this paper, we have investigated the effect of Be acceptors on the electroluminescence and the spin polarization in GaAs/AlAs p-i-n resonant tunneling diodes. The quantum well emission comprise two main lines separated by ∼20 meV attributed to excitonic and Be-related transitions, which intensities show remarkably abrupt variations at critical voltages, particularly at the electron resonant peak where it shows a high-frequency bistability. The circular-polarization degree of the quantum-well electroluminescence also shows strong and abrupt variations at the critical bias voltages and it attains relatively large values (of ∼−75% at 15 T). These effects may be explored to design novel devices for spintronic applications such as a high-frequency spin-oscillators.
- OSTI ID:
- 22314567
- Journal Information:
- Journal of Applied Physics, Vol. 116, Issue 5; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0021-8979
- Country of Publication:
- United States
- Language:
- English
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