Electronic and physico-chemical properties of nanometric boron delta-doped diamond structures

Journal Article · Thu Aug 28 00:00:00 EDT 2014 · Journal of Applied Physics

DOI:https://doi.org/10.1063/1.4893186· OSTI ID:22314336

Fiori, A.; Tran Thi, T. N.; Bousquet, J.; Delahaye, J.; Grenet, T.; Eon, D.; Omnès, F.; Bustarret, E. ^[1]; Volpe, P. N.; Tranchant, N.; Mer-Calfati, C.; Arnault, J. C. ^[2]; Gerbedoen, J. C.; Soltani, A.; De Jaeger, J. C. ^[3]; Alegre, M. P.; Piñero, J. C.; Araújo, D. ^[4]; Jomard, F. ^[5]; others, and

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1. Université Grenoble Alpes, Institut NEEL, 38042 Grenoble (France)
2. CEA, LIST, Diamond Sensors Laboratory, 91191 Gif-sur-Yvette (France)
3. IEMN, UMR-CNRS 8520, Avenue Poincaré, Université de Lille 1, 59652 Villeneuve d'Ascq (France)
4. Dpto Ciencia de los Materiales, Facultad de Ciencias, Universidad de Cádiz, 11510 Puerto Real (Cádiz) (Spain)
5. Groupe d'Étude de la Matière Condensée (GEMaC), UMR 8635 du CNRS, UVSQ, 45 Avenue des États-Unis, 78035 Versailles Cedex (France)

Heavily boron doped diamond epilayers with thicknesses ranging from 40 to less than 2 nm and buried between nominally undoped thicker layers have been grown in two different reactors. Two types of [100]-oriented single crystal diamond substrates were used after being characterized by X-ray white beam topography. The chemical composition and thickness of these so-called delta-doped structures have been studied by secondary ion mass spectrometry, transmission electron microscopy, and spectroscopic ellipsometry. Temperature-dependent Hall effect and four probe resistivity measurements have been performed on mesa-patterned Hall bars. The temperature dependence of the hole sheet carrier density and mobility has been investigated over a broad temperature range (6 K < T < 450 K). Depending on the sample, metallic or non-metallic behavior was observed. A hopping conduction mechanism with an anomalous hopping exponent was detected in the non-metallic samples. All metallic delta-doped layers exhibited the same mobility value, around 3.6 ± 0.8 cm{sup 2}/Vs, independently of the layer thickness and the substrate type. Comparison with previously published data and theoretical calculations showed that scattering by ionized impurities explained only partially this low common value. None of the delta-layers showed any sign of confinement-induced mobility enhancement, even for thicknesses lower than 2 nm.

• OSTI ID: 22314336
• Journal Information: Journal of Applied Physics, Vol. 116, Issue 8; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0021-8979
• Country of Publication: United States
• Language: English

Related Subjects

75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
77 NANOSCIENCE AND NANOTECHNOLOGY
BORON
CARRIER DENSITY
COMPARATIVE EVALUATIONS
DIAMONDS
DOPED MATERIALS
ELLIPSOMETRY
HALL EFFECT
IMPURITIES
MASS SPECTROSCOPY
MONOCRYSTALS
NANOSTRUCTURES
SCATTERING
SUBSTRATES
TEMPERATURE RANGE 0013-0065 K
TEMPERATURE RANGE 0400-1000 K
TRANSMISSION ELECTRON MICROSCOPY
X RADIATION